Datasheet > MRF21045LR3

MRF21045LR3

更新时间： 2024-09-13 05:50:11

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RF Power Field Effect Transistors

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MRF21045LR3 数据手册

Document Number: MRF21045

Rev. 11, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for W-CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN - PCS/cellular radio and WLL

applications.

MRF21045LR3

MRF21045LSR3

• Typical 2-carrier W-CDMA Performance for V_DD= 28 Volts, I_DQ= 500 mA,

f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz,

Adjacent Channels measured over 3.84 MHz Bandwidth at f1 -5 MHz

and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth

at f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability

on CCDF.

2110-2170 MHz, 45 W, 28 V

LATERAL N-CHANNEL

RF POWER MOSFETs

Output Power — 10 Watts Avg.

Efficiency — 23.5%

Gain — 15 dB

IM3 — -37.5 dBc

ACPR — -41 dBc

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW

Output Power

Features

• Internally Matched for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

CASE 465E-04, STYLE 1

NI-400

MRF21045LR3

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Low Gold Plating Thickness on Leads, 40μ″ Nominal.

• RoHS Compliant

CASE 465F-04, STYLE 1

NI-400S

• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.

MRF21045LSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +65

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

105

0.60

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

(1)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

1.65

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

Machine Model

1 (Minimum)

M2 (Minimum)

1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF21045LR3 MRF21045LSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

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与MRF21045LR3相关器件

型号	品牌	获取价格	描述	数据表
MRF21045LR3_08	FREESCALE	获取价格	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF21045LSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21045LSR3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF21045R3	MOTOROLA	获取价格	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-400, CASE 465E-04, 2 PIN
MRF21045R3	NXP	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391VAR
MRF21045S	MOTOROLA	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic
MRF21045S	NXP	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391B
MRF21045SR3	MOTOROLA	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic
MRF21060	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF21060	FREESCALE	获取价格	RF Power Field Effect Transistors

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