MRF21045

更新时间： 2024-11-14 22:35:15

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体射频场效应晶体管功率场效应晶体管局域网
页数	文件大小	规格书
12页	550K
描述
RF Power Field Effect Transistors

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MRF21045 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code：	unknown	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

MRF21045 数据手册

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Freescale Semiconductor, Inc.

Order this document

by MRF21045/D

The RF MOSFET Line

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for W-CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN - PCS/cellular radio and WLL

applications.

MRF21045LR3

MRF21045LSR3

• Typical 2-carrier W-CDMA Performance for V_DD= 28 Volts, I_DQ= 500 mA,

f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz,

Adjacent Channels measured over 3.84 MHz Bandwidth at f1 -5 MHz

and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth

at f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability

on CCDF.

2170 MHz, 45 W, 28 V

LATERAL N-CHANNEL

RF POWER MOSFETs

Output Power — 10 Watts Avg.

Efficiency — 23.5%

Gain — 15 dB

IM3 — -37.5 dBc

ACPR — -41 dBc

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

CASE 465E-04, STYLE 1

NI-400

MRF21045LR3

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 45 Watts CW

Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Low Gold Plating Thickness on Leads, 40µ″ Nominal.

• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.

CASE 465F-04, STYLE 1

NI-400S

MRF21045LSR3

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

105

0.60

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

- 65 to +150

200

°C

stg

ESD PROTECTION CHARACTERISTICS

Test Conditions

Class

Human Body Model

Machine Model

1 (Minimum)

M2 (Minimum)

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

1.65

°C/W

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Rev. 9

MOTOROLA RF DEVICE DATA

MRF21045LR3 MRF21045LSR3

 Motorola, Inc. 2004

For More Information On This Product,

Go to: www.freescale.com

12 3 4 5 6 7...12

中文翻译

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与MRF21045相关器件

型号	品牌	获取价格	描述	数据表
MRF21045LR3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF21045LR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21045LR3_08	FREESCALE	获取价格	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF21045LSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21045LSR3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF21045R3	MOTOROLA	获取价格	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-400, CASE 465E-04, 2 PIN
MRF21045R3	NXP	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391VAR
MRF21045S	MOTOROLA	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic
MRF21045S	NXP	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391B
MRF21045SR3	MOTOROLA	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic

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