Datasheet > MRF183

MRF183

更新时间： 2024-01-11 21:34:01

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		射频
页数	文件大小	规格书
10页	225K
描述
LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

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MRF183 数据手册

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SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

N–Channel Enhancement–Mode Lateral

MOSFETs

Designed for broadband commercial and industrial applications at frequen-

cies to 1.0 GHz. The high gain and broadband performance of these devices

makes ithem ideal for large–signal, common source amplifier applications in 28

volt base station equipment.

45 W, 1.0 GHz

LATERAL N–CHANNEL

BROADBAND

RF POWER MOSFETs

•

Guaranteed Performance at 945 MHz, 28 Volts

Output Power – 45 Watts PEP

Power Gain – 11.5 dB

Efficiency – 33%

IMD – 28 dBc

•

Characterized with Series Equivalent Large–Signal

Impedance Parameters

•

S–Parameter Characterization at High Bias Levels

Excellent Thermal Stability

CASE 360B–01, STYLE 1

(MRF183)

100% Tested for Load Mismatch Stress at all Phase Angles

with 5:1 VSWR @ 28 Vdc, 945 MHz, 45 Watts CW

CASE 360C–03, STYLE 1

(MRF183S)

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Adc

Drain–Source Voltage

DSS

Drain–Gate Voltage (RGS = 1 Meg Ohm)

Gate–Source Voltage

DGR

±20

Drain Current – Continuous

Total Device Dissipation @ T = 70°C

Derate above 70°C

0.67

W/°C

Storage Temperature Range

Operating Junction Temperature

– 65 to +200

200

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

1.5

°C/W

θJC

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 6

MOTOROLA RF DEVICE DATA

Motorola, Inc. 1997

MRF183 MRF183S

12 3 4 5 6 7...10

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与MRF183相关器件

型号	品牌	获取价格	描述	数据表
MRF183LSR1	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF183LSR1	MOTOROLA	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-360S, CASE 360C-05, 2 PIN
MRF183R1	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF183R1	MOTOROLA	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-360, CASE 360B-05, 2 PIN
MRF183S	MOTOROLA	获取价格	LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF183SR1	MOTOROLA	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 360C-05, 3 PIN
MRF184	MOTOROLA	获取价格	LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF184R1	FREESCALE	获取价格	N-Channel Enhancement-Mode Lateral MOSFETs
MRF184S	MOTOROLA	获取价格	LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF184SR1	FREESCALE	获取价格	N-Channel Enhancement-Mode Lateral MOSFETs