Datasheet > MRF183LSR1

MRF183LSR1

更新时间： 2024-09-27 10:47:31

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频放大器
页数	文件大小	规格书
12页	542K
描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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数据手册

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MRF183LSR1 数据手册

ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MRF183/D

The RF MOSFET Line

RF Power

MRF183R1

Field Effect Transistors

N-Channel Enhancement-Mode Lateral

MOSFETs

MRF183LSR1

Designed for broadband commercial and industrial applications with frequen-

cies to 1.0 GHz. The high gain and broadband performance of these devices

make them ideal for large-signal, common source amplifier applications in 28

volt base station equipment.

1.0 GHz, 45 W, 28 V

LATERAL N-CHANNEL

BROADBAND

RF POWER MOSFETs

• Guaranteed Performance at 945 MHz, 28 Volts

Output Power — 45 Watts PEP

Power Gain — 11.5 dB

Efficiency — 33%

IMD — - 28 dBc

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal

Impedance Parameters

CASE 360B-05, STYLE 1

NI-360

• S-Parameter Characterization at High Bias Levels

MRF183R1

• 100% Tested for Load Mismatch Stress at all Phase Angles

with 5:1 VSWR @ 28 Vdc, 945 MHz, 45 Watts CW

• In Tape and Reel. R1 Suffix = 500 Units per

32 mm, 13 inch Reel.

CASE 360C-05, STYLE 1

NI-360S

MRF183LSR1

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Adc

Drain-Source Voltage

Drain-Gate Voltage (RGS = 1 Meg Ohm)

Gate-Source Voltage

DSS

DGR

Drain Current - Continuous

Total Device Dissipation @ T = 70°C

Derate above 70°C

0.67

W/°C

Storage Temperature Range

Operating Junction Temperature

- 65 to +200

200

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

1.5

°C/W

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 15

MOTOROLA RF DEVICE DATA

MRF183R1 MRF183LSR1

 Motorola, Inc. 2003

Archived 2005

12 3 4 5 6 7...12

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与MRF183LSR1相关器件

型号	品牌	获取价格	描述	数据表
MRF183R1	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF183R1	MOTOROLA	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-360, CASE 360B-05, 2 PIN
MRF183S	MOTOROLA	获取价格	LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF183SR1	MOTOROLA	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 360C-05, 3 PIN
MRF184	MOTOROLA	获取价格	LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF184R1	FREESCALE	获取价格	N-Channel Enhancement-Mode Lateral MOSFETs
MRF184S	MOTOROLA	获取价格	LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF184SR1	FREESCALE	获取价格	N-Channel Enhancement-Mode Lateral MOSFETs
MRF185	ASI	获取价格	RF POWER MOSFET
MRF185	MOTOROLA	获取价格	LATERAL N-CHANNEL BROADBAND RF POWER MOSFET