MRF186

更新时间： 2024-02-06 19:18:06

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
8页	517K
描述
The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR Channel Enhancement?Mode Lateral MOSFET

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数据手册

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MRF186 数据手册

ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005

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SEMICONDUCTOR TECHNICAL DATA

Order this document

by MRF186/D

The RF MOSFET Line

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N–Channel Enhancement–Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with frequen-

cies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this

device make it ideal for large–signal, common source amplifier applications in 28

volt base station equipment.

1.0 GHz, 120 W, 28 V

LATERAL N–CHANNEL

BROADBAND

• Guaranteed Performance @ 960 MHz, 28 Volts

Output Power — 120 Watts PEP

Power Gain — 11 dB

RF POWER MOSFET

Efficiency — 30%

Intermodulation Distortion — –28 dBc

• Excellent Thermal Stability

• 100% Tested for Load Mismatch Stress at all Phase Angles with

5:1 VSWR @ 28 Vdc, 960 MHz, 120 Watts CW

CASE 375B–04, STYLE 1

NI–860

MAXIMUM RATINGS (2)

Rating

Symbol

Value

Unit

Vdc

Adc

Drain–Source Voltage

DSS

Drain–Gate Voltage (R = 1 MΩ)

DGR

Gate–Source Voltage

Drain Current — Continuous

Total Device Dissipation @ T = 70°C

Derate above 70°C

162.5

1.25

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

– 65 to +150

200

°C

stg

THERMAL CHARACTERISTICS (2)

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

0.8

°C/W

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 5

MOTOROLA RF DEVICE DATA

MRF186

 Motorola, Inc. 2002

Archived 2005

12 3 4 5 6 7 8

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