Datasheet > MRF185_02

MRF185_02

更新时间： 2022-03-30 20:25:50

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
页数	文件大小	规格书
4页	529K
描述
N-Channel Enhancement-Mode Lateral MOSFET

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MRF185_02 数据手册

ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005

ꢓ ꢔꢏ ꢔ ꢀꢔ ꢕꢖ

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MRF185/D

The RF MOSFET Line

ꢀ ꢁ ꢂ ꢃꢄ ꢅ ꢆ ꢁꢇꢅ ꢈꢉ ꢊ ꢋ ꢌꢌ ꢅꢍ ꢎ ꢏꢆ ꢐꢑ ꢒ ꢇꢒ ꢎꢃ ꢆ

ꢓ

ꢀ

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ꢘ

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N–Channel Enhancement–Mode Lateral MOSFET

• High Gain, Rugged Device

• Broadband Performance from HF to 1 GHz

1.0 GHz, 85 W, 28 V

LATERAL N–CHANNEL

BROADBAND

• Bottom Side Source Eliminates DC Isolators, Reducing Common Mode

Inductances

RF POWER MOSFET

ꢀ

ꢁ

ꢂ

ꢃ

ꢄ

ꢅ

ꢆ

ꢇ

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ꢀ

CASE 375B–04, STYLE 1

NI–860

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

°C

Drain–Source Voltage

DSS

Gate–Source Voltage

Storage Temperature Range

Operating Junction Temperature

stg

– 65 to +150

200

°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

250

1.45

Watts

W/°C

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

0.7

°C/W

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(V = 0 Vdc, I = 1 mAdc)

–

Vdc

µAdc

(BR)DSS

Zero Gate Voltage Drain Current

(V = 28 Vdc, V = 0 Vdc)

DSS

Gate–Source Leakage Current

(V = 20 Vdc, V = 0 Vdc)

–

GSS

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 5

MOTOROLA RF DEVICE DATA

MRF185

 Motorola, Inc. 2002

Archived 2005

12 3 4

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