Datasheet > MRF19030LR3

MRF19030LR3

更新时间： 2024-11-14 04:39:07

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RF Power Field Effect Transistors

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MRF19030LR3 数据手册

Document Number: MRF19030

Rev. 12, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for class AB PCN and PCS base station applications with

frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and

multicarrier amplifier applications.

MRF19030LR3

MRF19030LSR3

• CDMA Performance @ 1990 MHz, 26 Volts

IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13

885 kHz — -47 dBc in 30 kHz BW

1.25 MHz — -55 dBc in 12.5 kHz BW

2.25 MHz — -55 dBc in 1 MHz BW

Output Power — 4.5 Watts Avg.

1930-1990 MHz, 30 W, 26 V

LATERAL N-CHANNEL

RF POWER MOSFETs

Power Gain — 13.5 dB

Efficiency — 17%

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 30 Watts CW

Output Power

Features

• Internally Matched for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Low Gold Plating Thickness on Leads, 40μ″ Nominal.

• RoHS Compliant

CASE 465E-04, STYLE 1

NI-400

MRF19030LR3

• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.

CASE 465F-04, STYLE 1

NI-400S

MRF19030LSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +65

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

83.3

0.48

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

2.1

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

Machine Model

2 (Minimum)

M3 (Minimum)

MRF19030LR3 MRF19030LSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7 8

中文翻译

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与MRF19030LR3相关器件

型号	品牌	获取价格	描述	数据表
MRF19030LSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF19030LSR3	MOTOROLA	获取价格	The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MO
MRF19030R3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF19030S	MOTOROLA	获取价格	L BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 465F-03, 3 PIN
MRF19030SR3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF19045LR3	MOTOROLA	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF19045LR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF19045LR3_06	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF19045LR3_08	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF19045LSR3	MOTOROLA	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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