是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | PLASTIC, CASE 369D-01, DPAK-3 | 针数: | 3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
风险等级: | 5.23 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 4 A |
集电极-发射极最大电压: | 100 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 15 | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 12.5 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 40 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJD253-1G | ONSEMI |
获取价格 |
Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications | |
MJD253T4 | ONSEMI |
获取价格 |
Complementary Silicon Plastic Power Transistor | |
MJD253T4 | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
MJD253T4G | ONSEMI |
获取价格 |
Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications | |
MJD2873 | NEXPERIA |
获取价格 |
50 V, 2 A NPN high power bipolar transistorProduction | |
MJD2873Q | DIODES |
获取价格 |
NPN, 50V, 2A, TO252 | |
MJD2873-Q | NEXPERIA |
获取价格 |
50 V, 2 A NPN high power bipolar transistorProduction | |
MJD29 | FAIRCHILD |
获取价格 |
General Purpose Amplifier Low Speed Switching Applications | |
MJD2955 | MOTOROLA |
获取价格 |
SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS | |
MJD2955 | ONSEMI |
获取价格 |
Complementary Power Transistors |