是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | SMALL OUTLINE, R-PDSO-G2 | Reach Compliance Code: | unknown |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.62 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 10 A |
集电极-发射极最大电压: | 60 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 5 | JESD-30 代码: | R-PDSO-G2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
功耗环境最大值: | 20 W | 最大功率耗散 (Abs): | 20 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 2 MHz | 最大关闭时间(toff): | 3000 ns |
VCEsat-Max: | 8 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJD2955(TO-251) | BL Galaxy Electrical |
获取价格 |
60V,10A,Medium Power PNP Bipolar Transistor | |
MJD2955(TO-252) | BL Galaxy Electrical |
获取价格 |
60V,10A,Medium Power PNP Bipolar Transistor | |
MJD2955_02 | STMICROELECTRONICS |
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COMPLEMENTARY POWER TRANSISTORS | |
MJD2955_06 | ONSEMI |
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Complementary Power Transistors DPAK For Surface Mount Applications | |
MJD2955_11 | ONSEMI |
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Complementary Power Transistors | |
MJD2955-001 | ONSEMI |
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Complementary Power Transistors DPAK For Surface Mount Applications | |
MJD2955-001G | ONSEMI |
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Complementary Power Transistors DPAK For Surface Mount Applications | |
MJD2955-1 | MOTOROLA |
获取价格 |
SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS | |
MJD2955-1G | ONSEMI |
获取价格 |
Complementary Power Transistors | |
MJD2955G | ONSEMI |
获取价格 |
Complementary Power Transistors DPAK For Surface Mount Applications |