Datasheet > MJD2955

MJD2955

更新时间： 2024-11-19 14:54:07

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
5页	1647K
描述
TO-252-2L

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中文翻译

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数据手册

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MJD2955 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-252-2L Plastic-Encapsulate Transistors

MJD2955 ^TRANSISTOR(PNP)

TO-252-2L

FEATURES

Designed for General Purpose Amplifier and Low Speed

Switching Applications

1.BASE

Electrically Simiar to MJD3055

DC Current Gain Specified to10 Amperes

2.COLLECTOR

3.EMITTER

ꢀꢁꢂꢃꢄꢅꢆ

Equivalent Circuit

MJD2955ꢀ'ꢁ#ꢂ"ꢁꢃ"ꢄꢅꢁꢃ

ꢆꢄꢇꢂꢅꢃꢅꢄꢈꢀꢉꢊꢁꢁ ꢃ!ꢄꢇꢅꢂ ꢃ"ꢄ!ꢋꢄꢌ ꢅꢃꢅꢁ#ꢂ"ꢁ$ꢃ ꢃ

ꢂ(ꢃ ꢄ ꢁ$ꢈ)ꢁꢃ ꢄꢊ!ꢍꢇꢃꢅꢁ#ꢂ"ꢁ

MJD2955

XXXX

XXXX=Code

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-70

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-60

-5

Collector Current -Continuous

Collector Power Dissipation

-10

P_C

1.25

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55~+150

℃

www.jscj-elec.com

Rev. - 2.2

12 3 4 5

中文翻译

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