5秒后页面跳转
MA3S132D PDF预览

MA3S132D

更新时间: 2024-11-11 22:46:31
品牌 Logo 应用领域
松下 - PANASONIC 整流二极管光电二极管
页数 文件大小 规格书
2页 50K
描述
Silicon epitaxial planar type

MA3S132D 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SC-81
包装说明:R-PDSO-F3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.81
配置:COMMON ANODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.2 V
JESD-30 代码:R-PDSO-F3JESD-609代码:e6
湿度敏感等级:1最大非重复峰值正向电流:0.5 A
元件数量:2端子数量:3
最高工作温度:150 °C最大输出电流:0.1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:80 V
最大反向恢复时间:0.01 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Tin/Bismuth (Sn/Bi)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MA3S132D 数据手册

 浏览型号MA3S132D的Datasheet PDF文件第2页 
Switching Diodes  
MA3S132D  
Silicon epitaxial planar type  
Unit : mm  
1.60 ± ±0.1  
0.80 ± ±0.05  
0.80  
For switching circuits  
1
2
I Features  
3
Short reverse recovery time trr  
Small terminal capacitance, Ct  
Super-small SS-mini type package contained two elements, allow-  
ing high-density mounting  
I Absolute Maximum Ratings Ta = 25°C  
Parameter  
Reverse voltage (DC)  
Peak reverse voltage  
Symbol  
VR  
Rating  
80  
Unit  
V
0.44  
0.44  
0.88 +±±00..0035  
1 : Cathode 1  
2 : Cathode 2  
3 : Anode 1  
Anode 2  
VRM  
IF  
80  
V
Single  
Double  
Single  
Double  
Single  
Double  
100  
Forward current  
(DC)  
mA  
150  
SS-Mini Type Package (3-pin)  
IFM  
225  
Peak forward  
current  
mA  
mA  
Marking Symbol: MO  
Internal Connection  
340  
IFSM  
500  
Non-repetitive peak  
forward surge current  
*
750  
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
1
2
Tstg  
55 to +150  
3
Note)  
* : t = 1 s  
I Electrical Characteristics Ta = 25°C  
Parameter  
Reverse current (DC)  
Forward voltage (DC)  
Reverse voltage (DC)  
Terminal capacitance  
Reverse recovery time*  
Symbol  
IR  
Conditions  
Min  
80  
Typ  
Max  
100  
1.2  
Unit  
nA  
V
VR = 75 V  
VF  
IF = 100 mA  
IR = 100 µA  
VR  
V
Ct  
VR = 0 V, f = 1 MHz  
15  
10  
pF  
ns  
trr  
IF = 10 mA, VR = 6 V  
Irr = 0.1 · IR, RL = 100 Ω  
Note) 1. Rated input/output frequency: 100 MHz  
2. * : trr measuring circuit  
Bias Application Unit N-50BU  
Input Pulse  
tp  
Output Pulse  
trr  
tr  
t
10%  
IF  
t
A
90%  
VR  
Irr = 0.1 · IR  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
IF = 10 mA  
VR = 6 V  
RL = 100 Ω  
Pulse Generator  
(PG-10N)  
Rs = 50 Ω  
W.F.Analyzer  
(SAS-8130)  
Ri = 50 Ω  
1

与MA3S132D相关器件

型号 品牌 获取价格 描述 数据表
MA3S132DG PANASONIC

获取价格

Mixer Diode, Very High Frequency, Silicon, ROHS COMPLIANT, SSMINI3-F3, 3 PIN
MA3S132E PANASONIC

获取价格

Silicon epitaxial planar type
MA3S132EG PANASONIC

获取价格

Mixer Diode, Very High Frequency, Silicon, ROHS COMPLIANT, SSMINI3-F3, 3 PIN
MA3S132EGL PANASONIC

获取价格

Mixer Diode, Very High Frequency, Silicon, ROHS COMPLIANT, SSMINI3-F3, 3 PIN
MA3S132K PANASONIC

获取价格

Silicon epitaxial planar type
MA3S132KG PANASONIC

获取价格

Mixer Diode, Very High Frequency, Silicon, ROHS COMPLIANT, SSMINI2-F4, 2 PIN
MA3S133 PANASONIC

获取价格

Silicon epitaxial planar type
MA3S1330G PANASONIC

获取价格

Mixer Diode, Silicon, ROHS COMPLIANT, SSMINI2-F3, 3 PIN
MA3S137 PANASONIC

获取价格

Silicon epitaxial planar type
MA3S781 PANASONIC

获取价格

Silicon epitaxial planar type