MA3S132K

更新时间： 2024-11-11 21:55:11

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
4页	106K
描述
Silicon epitaxial planar type

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中文翻译

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数据手册

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MA3S132K 数据手册

Switching Diodes

MA3S132A (MA132A), MA3S132K (MA132K)

Silicon epitaxial planar type

Unit: mm

0.28 0.05

+0.05

0.12

–0.02

For switching circuits

■ Features

• Short reverse recovery time t_rr

• Small terminal capacitance C_t

• Allowing high-density mounting

0.28 0.05

(0.51)

(0.80) (0.80)

+0.05

–0.03

0.60

1.60

–0.03

3˚

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Reverse voltage

Symbol

V_R

Rating

Unit

MA3S132A MA3S132K

Cathode

N.C.

Anode

N.C.

Cathode

Maximum peak reverse voltage

Forward current

V_RM

I_F

EIAJ: SC-81

SSMini3-F2 Package

100

225

500

Peak forward current

I_FM

Marking Symbol:

Non-repetitive peak forward

surge current ^*

I_FSM

• MA3S132A: MB • MA3S132K: MI

Internal Connection

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

Note) : t = 1 s

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Forward voltage

Symbol

Conditions

I_F= 100 mA

Min

Typ

Max

Unit

V_F

V_R

I_R

1.2

Reverse voltage

I_R= 100 µA

V_R= 75 V

Reverse current

100

Terminal capacitance

Reverse recovery time ^*

C_t

t_rr

V_R= 0 V, f = 1 MHz

I_F= 10 mA, V_R= 6 V

I_rr= 0.1 I_R, R_L= 100 Ω

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. Absolute frequency of input and output is 100 MHz.

3. : t_rrmeasurement circuit

Bias Application Unit (N-50BU)

Input Pulse

t_p

Output Pulse

t_rr

t_r

10%

I_F

90%

V_R

I_rr= 0.1 I_R

t_p= 2 µs

t_r= 0.35 ns

δ = 0.05

I_F= 10 mA

V_R= 6 V

R_L= 100 Ω

Pulse Generator

(PG-10N)

Wave Form Analyzer

(SAS-8130)

R_s= 50 Ω

R_i= 50 Ω

Note) The part numbers in the parenthesis show conventional part number.

Publication date: March 2004

SKF00023BED

12 3 4

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