MA3S781F

更新时间： 2024-09-23 13:10:15

品牌	Logo	应用领域
松下 - PANASONIC		整流二极管光电二极管
页数	文件大小	规格书
3页	71K
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中文翻译

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数据手册

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MA3S781F 数据手册

Schottky Barrier Diodes (SBD)

MA3S781 (MA781)

Silicon epitaxial planar type

Unit: mm

0.28 0.0ꢀ

For switching

+0.0ꢀ

0.12

–0.02

ꢀ Features

•

High-density mounting is possible

Optimum for high frequency rectification because of its short

reverse recovery time (t_rr)

Low forward voltage V_Fand good rectification efficiency

SS-Mini type 3-pin package

0.28 ^0.0ꢀ

(0.ꢀ1)

•

(0.80) (0.80)

+0.0ꢀ

0.60

–0.03

+0.0ꢀ

1.60

–0.03

3°

ꢀ Absolute Maximum Ratings T_a= 25°C

Parameter

Reverse voltage (DC)

Peak reverse voltage

Forward current (DC)

Peak forward current

Junction temperature

Storage temperature

Symbol

V_R

Rating

Unit

1 : Anode

2 : N.C.

3 : Cathode

EIAJ : SC-89

V_RM

I_F

°C

SSMini3-F2 Package

I_FM

150

Marking Symbol: M1L

T_j

125

Internal Connection

T_stg

−55 to +125

°C

ꢀ Electrical Characteristics T_a= 25°C

Parameter

Reverse current (DC)

Forward voltage (DC)

Symbol

I_R

Conditions

Min

Typ

Max

300

0.4

Unit

V_R= 30 V

I_F= 1 mA

V_F1

V_F2

C_t

I_F= 30 mA

Terminal capacitance

Reverse recovery time ^*

V_R= 1 V, f = 1 MHz

1.5

1.0

t_rr

I_F= I_R= 10 mA

I_rr= 1 mA, R_L= 100 Ω

Detection efficiency

V_in= 3 V_(peak), f = 30 MHz

R_L= 3.9 kΩ, C_L= 10 pF

Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

ꢀ

2. Rated input/output frequency: 2 GHz

3. : t_rrmeasuring instrument

Bias Application Unit N-50BU

Input Pulse

Output Pulse

t_rr

t_p

t_r

10%

I_F

90%

V_R

I_rr= 1 mA

t_p= 2 µs

t_r= 0.35 ns

δ = 0.05

I_F= 10 mA

I_R= 10 mA

R_L= 100 Ω

Pulse Generator

(PG-10N)

Wave Form Analyzer

(SAS-8130)

R_s= 50 Ω

R_i= 50 Ω

Note) The part number in the parenthesis shows conventional part number.

Publication date: August 2001

SKH00060AED

12 3

中文翻译

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