5秒后页面跳转
MA3SD22F PDF预览

MA3SD22F

更新时间: 2024-11-12 19:44:11
品牌 Logo 应用领域
松下 - PANASONIC 光电二极管
页数 文件大小 规格书
3页 67K
描述
Rectifier Diode, Schottky, 2 Element, 0.03A, 30V V(RRM), Silicon, SC-81, 3 PIN

MA3SD22F 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-81包装说明:R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.84配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.3 VJESD-30 代码:R-PDSO-F3
JESD-609代码:e6湿度敏感等级:1
元件数量:2端子数量:3
最高工作温度:125 °C最大输出电流:0.03 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:30 V
最大反向恢复时间:0.001 µs子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Tin/Bismuth (Sn/Bi)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MA3SD22F 数据手册

 浏览型号MA3SD22F的Datasheet PDF文件第2页浏览型号MA3SD22F的Datasheet PDF文件第3页 
Schottky Barrier Diodes (SBD)  
MA3SD22F  
Silicon epitaxial planar type  
Unit: mm  
0.28 0.05  
For cellular phone  
+0.05  
0.12  
–0.02  
3
I Features  
Low forward voltage: VF < 0.3 V (at IF = 1 mA)  
High-frequency wave detection is possible  
SS-Mini type 3-pin package  
1
2
0.28 0.05  
(0.51)  
(0.51)  
(0.80) (0.80)  
+0.05  
0.60  
–0.03  
+0.05  
1.60  
–0.03  
I Absolute Maximum Ratings Ta = 25°C  
3°  
Parameter  
Reverse voltage (DC)  
Peak reverse voltage  
Forward current (DC) Single  
Series  
Symbol  
VR  
Rating  
Unit  
V
30  
VRM  
IF  
30  
30  
V
1 : Anode 1  
2 : Cathode 2  
3 : Cathode 3  
Anode 1  
mA  
20  
Peak forward current Single  
Seriesꢀ  
IFM  
150  
mA  
EIAJ : SC-89  
SSMini3-F2 Package  
110  
Marking Symbol: M5P  
Junction temperature  
Storage temperature  
Tj  
125  
°C  
°C  
Internal Connection  
Tstg  
55 to +125  
3
1
2
I Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Reverse current (DC)  
Forward voltage (DC)  
Symbol  
IR  
Conditions  
Min  
Typ  
Max  
50  
Unit  
µA  
V
VR = 30 V  
IF = 1 mA  
VF1  
VF2  
Ct  
0.3  
1.0  
IF = 30 mA  
V
Terminal capacitance  
Reverse recovery time *  
VR = 1 V, f = 1 MHz  
1.5  
1.0  
pF  
ns  
trr  
IF = IR = 10 mA  
Irr = 1 mA, RL = 100 Ω  
Detection efficiency  
η
Vin = 3 V(peak) , f = 30 MHz  
RL = 3.9 k, CL = 10 pF  
65  
%
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body  
and the leakage of current from the operating equipment.  
2. Rated input/output frequency: 2 GHz  
3. : trr measuring instrument  
*
Bias Application Unit N-50BU  
Input Pulse  
Output Pulse  
trr  
tp  
tr  
t
10%  
IF  
t
A
90%  
VR  
Irr = 1 mA  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
IF = 10 mA  
IR = 10 mA  
RL = 100 Ω  
Pulse Generator  
(PG-10N)  
Wave Form Analyzer  
(SAS-8130)  
Rs = 50 Ω  
Ri = 50 Ω  
Publication date: August 2001  
SKH00065AED  
1

与MA3SD22F相关器件

型号 品牌 获取价格 描述 数据表
MA3SD29F PANASONIC

获取价格

Rectifier Diode, Schottky, 2 Element, 0.1A, 30V V(RRM), Silicon, SC-81, 3 PIN
MA3SD29FG PANASONIC

获取价格

Mixer Diode, Very High Frequency, Silicon, ROHS COMPLIANT, SSMINI3-F3, 3 PIN
MA3SE01 PANASONIC

获取价格

Mixer Diode, L Band, Silicon, SC-81, 3 PIN
MA3SE010G PANASONIC

获取价格

Mixer Diode, High Frequency, Silicon, ROHS COMPLIANT, SSMINI3-F3, 3 PIN
MA3SE02 PANASONIC

获取价格

Schottky Barrier Diodes (SBD)
MA3SE020G PANASONIC

获取价格

Mixer Diode, High Frequency, Silicon, ROHS COMPLIANT, SSMINI3-F3, 3 PIN
MA3TNE1700-S3 AMPHENOL

获取价格

CONN RCPT HSNG F/M 17POS PNL MNT
MA3U649 PANASONIC

获取价格

Silicon planar type (cathode common)
MA3U650 PANASONIC

获取价格

Rectifier Diode, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon,
MA3U653 PANASONIC

获取价格

Rectifier Diode, 1 Phase, 2 Element, 5A, 300V V(RRM), Silicon,