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MA3UD06 PDF预览

MA3UD06

更新时间: 2024-11-12 19:58:59
品牌 Logo 应用领域
松下 - PANASONIC 二极管
页数 文件大小 规格书
3页 172K
描述
Mixer Diode, Very High Frequency, Silicon, U-TYPE PACKAGE-3

MA3UD06 技术参数

生命周期:Obsolete包装说明:R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.60
风险等级:5.84配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:MIXER DIODE
频带:VERY HIGH FREQUENCYJESD-30 代码:R-PSSO-G2
元件数量:2端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:SINGLE
Base Number Matches:1

MA3UD06 数据手册

 浏览型号MA3UD06的Datasheet PDF文件第2页浏览型号MA3UD06的Datasheet PDF文件第3页 
Schottky Barrier Diodes (SBD)  
MA3UD06  
Silicon epitaxial planar type (cathode common)  
Unit : mm  
For switching power supply  
6.5 0.1  
5.3 0.1  
4.35 0.1  
2.3 0.1  
0.5 0.1  
I Features  
U-type package  
Allowing to rectify under (IF(AV) = 6 A) condition  
Low forward rise voltage VF (VF < 0.45 V)  
Cathode common type  
1.0 0.1  
0.1 0.05  
0.93 0.1  
0.5 0.1  
0.75 0.1  
2.3 0.1  
4.6 0.1  
I Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
VRRM  
IF(AV
Rati
3
Unit  
V
Repetitive peak reverse voltage  
1 : Anode  
1
2
3
1
Average forward current*  
A
2 : Cathode  
(Common)  
3 : Anode  
Non-repetitive peak forward  
45  
2
surge current*  
U-Type Package  
Junction temperature  
Storage temperature  
Note) *1 TC = 2°C  
Tj  
40 to +125  
40 to +15  
°C  
°C  
Tstg  
*2 : Sie halfwave; 10 ms/cycle  
I Electrical Chaacteristics Ta = 25°C 3°C  
Paramter  
RevDC)  
ForC)  
Therma*  
Symbol  
IR  
Conditions  
Min  
Typ  
Max  
Unit  
mA  
V
VR = 30 V, TC = 25°C  
IF = 3 A, TC = 25°C  
1.0  
VF  
0.45  
12.5  
Rth(j-c)  
Between junction and case  
°C/W  
Note) 1. Ratd input/outpufrequency: 200 MHz  
2. * : TC = 25°C  
1

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