Datasheet > MA3X198

MA3X198

更新时间： 2024-11-11 22:14:59

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
2页	51K
描述
Silicon epitaxial planar type

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中文翻译

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MA3X198 数据手册

Switching Diodes

MA3X198

Silicon epitaxial planar type

Unit : mm

2.8 −⁺0⁰.^.3²

1.5 −⁺0⁰.^.205⁵

0.65 0.15

For general purpose

0.65 0.15

I Features

•

Two elements contained in one package, allowing high-density

mounting

•

Soft recovery characteristic (t_rr= 100 ns)

Can be connected in series

I Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

V_R

Rating

Unit

0.1 to 0.3

0.4 0.2

Reverse voltage (DC)

Repetitive peak reverse voltage

V_RRM

I_F(AV)

1 : Anode 1

2 : Cathode 2

3 : Cathode 1

Anode 2

Single

Series

Single

Series

Single

Series

100

Average forward

current

JEDEC : TO-236

EIAJ : SC-59A

Mini Type Package (3-pin)

I_FRM

225

Repetitive peak

forward current

Marking Symbol: M2F

170

I_FSM

500

Non-repetitive peak

forward surge current

Internal Connection

325

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

Note)

* : t = 1 s

I Electrical Characteristics T_a= 25°C

Parameter

Reverse current (DC)

Forward voltage (DC)

Symbol

I_R

Conditions

Min

0.65

Typ

Max

Unit

V_R= 40 V

V_F1

V_F2

C_t

I_F= 100 µA

0.72

1.2

I_R= 100 mA

Terminal capacitance

Reverse recovery time^*

V_R= 6 V, f = 1 MHz

t_rr

I_F= 10 mA, V_R= 6 V

100

I_rr= 0.1 · I_R, R_L= 100 Ω

Note) 1. Rated input/output frequency: 100 MHz

2. * : t_rrmeasuring circuit

Bias Application Unit N-50BU

Input Pulse

t_p

Output Pulse

t_rr

t_r

10%

I_F

90%

V_R

I_rr= 0.1 · I_R

t_p= 2 µs

t_r= 0.35 ns

δ = 0.05

I_F= 10 mA

V_R= 6 V

R_L= 100 Ω

Pulse Generator

(PG-10N)

R_s= 50 Ω

W.F.Analyzer

(SAS-8130)

R_i= 50 Ω

中文翻译

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