This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA3X727 (MA727)
Silicon epitaxial planar type
Unit: mm
For super high speed switching
For small current rectification
+0.10
–0.05
0.40
+0.10
–0.06
0.16
3
■ Features
• Reverse voltage VR = 50 V is guaranteed
• Forward current (Average) IF(AV) = 200 mA rectification is
possible
1
2
(0.95) (0.95)
1.9±0.1
+0.20
–0.05
2.90
10˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Reverse voltage
Symbol
VR
Rating
50
Unit
V
1: Anode
2: N.C.
3: Cathode
Repetitive peak reverse voltage
Peak forward current
VRRM
IFM
IF(AV)
IFSM
50
V
300
200
1
mA
mA
A
EIAJ: SC-59
Mini3-G1 Package
Forward current (Average)
Marking Symbol: M1Z
Non-repetitive peak forward
surge current *
Internal Connection
Junction temperature
Storage temperature
Tj
150
°C
°C
3
Tstg
−55 to +150
Note) : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
*
1
2
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Forward voltage
Symbol
VF1
VF2
IR
Conditions
Min
Typ
Max
0.36
0.55
200
Unit
V
IF = 30 mA
IF = 200 mA
VR = 50 V
V
Reverse current
µA
pF
ns
Terminal capacitance
Reverse recovery time *
Ct
VR = 0 V, f = 1 MHz
30
trr
IF = IR = 100 mA
3.0
Irr = 10 mA, RL = 100 Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
ꢀ
3. Absolute frequency of input and output is 1 GHz.
4. : trr measurement circuit
*
Bias Application Unit (N-50BU)
Input Pulse
tp
Output Pulse
trr
tr
t
10%
IF
t
A
90%
VR
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Pulse Generator
(PG-10N)
Wave Form Analyzer
(SAS-8130)
Rs = 50 Ω
Ri = 50 Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SKH00082CED
1