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MA3X558 PDF预览

MA3X558

更新时间: 2024-11-11 22:26:43
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
2页 44K
描述
Silicon epitaxial planar type

MA3X558 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.84最小击穿电压:40 V
配置:COMMON CATHODE, 2 ELEMENTS最大二极管电容:0.5 pF
标称二极管电容:0.3 pF二极管元件材料:SILICON
最大二极管正向电阻:10 Ω二极管电阻测试电流:10 mA
二极管电阻测试频率:100 MHz二极管类型:PIN DIODE
频带:ULTRA HIGH FREQUENCY TO KA BANDJEDEC-95代码:TO-236
JESD-30 代码:R-PDSO-G3元件数量:2
端子数量:3最高工作温度:85 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.15 W认证状态:Not Qualified
反向测试电压:15 V子类别:PIN Diodes
表面贴装:YES技术:POSITIVE-INTRINSIC-NEGATIVE
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MA3X558 数据手册

 浏览型号MA3X558的Datasheet PDF文件第2页 
PIN Diodes  
MA3X558  
Silicon epitaxial planar type  
Unit : mm  
2.8 + 00..32  
1.5 + 00..2055  
0.65 0.15  
For UHF and SHF bands AGC  
0.65 0.15  
1
2
I Features  
Small diode capacitance CD  
3
Large variable range of forward dynamic resistance rf  
Mini type package, allowing downsizing of equipment and auto-  
matic insertion through the taping package and magazine package  
I Absolute Maximum Ratings Ta = 25°C  
0.1 to 0.3  
0.4 0.2  
Parameter  
Reverse voltage (DC)  
Peak reverse voltage  
Forward current (DC)  
Power dissipation  
Symbol  
VR  
Rating  
40  
Unit  
V
VRM  
IF  
45  
V
1 : Anode 1  
2 : Anode 2  
3 : Cathode 1,2  
JEDEC : TO-236  
EIAJ : SC-59  
Mini Type Package (3-pin)  
100  
mA  
mW  
°C  
PD  
150  
Operating ambient temperature*  
Storage temperature  
Topr  
Tstg  
25 to +85  
55 to +150  
Marking Symbol: M4C  
°C  
Internal Connection  
Note)  
* : Maximum ambient temperature during operation  
1
3
2
I Electrical Characteristics Ta = 25°C  
Parameter  
Reverse current (DC)  
Forward voltage (DC)  
Diode capacitance  
Symbol  
IR  
Conditions  
Min  
Typ  
Max  
100  
1.2  
Unit  
nA  
V
VR = 40 V  
IF = 100 mA  
VF  
1.05  
0.3  
2
CD  
VR = 15 V, f = 1 MHz  
IF = 10 µA, f = 100 MHz  
IF = 10 mA, f = 100 MHz  
0.5  
pF  
kΩ  
Forward dynamic resistance*  
rf1  
1
rf2  
6
10  
Note) 1Rated input/output frequency: 100 MHz  
2. Each characteristic is a standard for individual diode  
3* : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER  
1

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