5秒后页面跳转
MA3X789 PDF预览

MA3X789

更新时间: 2024-11-11 22:14:59
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
2页 48K
描述
Silicon epitaxial planar type

MA3X789 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.71其他特性:HIGH SPEED SWITCH
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.65 V
JEDEC-95代码:TO-236JESD-30 代码:R-PDSO-G3
JESD-609代码:e6湿度敏感等级:1
最大非重复峰值正向电流:2 A元件数量:1
端子数量:3最高工作温度:125 °C
最大输出电流:0.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:60 V最大反向恢复时间:0.0045 µs
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin/Bismuth (Sn/Bi)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MA3X789 数据手册

 浏览型号MA3X789的Datasheet PDF文件第2页 
Schottky Barrier Diodes (SBD)  
MA3X789  
Silicon epitaxial planar type  
Unit : mm  
2.8 + 00..32  
For super-high speed switching circuit  
For small current rectification  
0.65 0.15  
1.5 + 00..2055  
0.65 0.15  
1
2
I Features  
3
Allowing to rectify under (IF(AV) = 200 mA) condition  
Reverse voltage VR (DC value) = 60 V guaranteed  
I Absolute Maximum Ratings Ta = 25°C  
Parameter  
Reverse voltage (DC)  
Peak reverse voltage  
Average forward current  
Symbol  
VR  
Rating  
60  
Unit  
V
0.1 to 0.3  
0.4 0.2  
VRM  
60  
V
1 : Anode  
2 : NC  
3 : Cathode  
IF(AV)  
IFSM  
500  
2
mA  
A
JEDEC : TO-236  
EIAJ : SC-59  
Non-repetitive peak forward  
surge current*  
Mini Type Package (3-pin)  
Junction temperature  
Storage temperature  
Tj  
125  
°C  
°C  
Marking Symbol: M3W  
Tstg  
55 to +125  
Internal Connection  
Note)  
*
: The peak-to-peak value in one cycle of 50 Hz sine-wave  
(non-repetitive)  
1
2
3
I Electrical Characteristics Ta = 25°C  
Parameter  
Reverse current (DC)  
Forward voltage (DC)  
Terminal capacitance  
Reverse recovery time*  
Symbol  
Conditions  
Min  
Typ  
Max  
100  
Unit  
µA  
V
IR  
VF  
Ct  
trr  
VR = 50 V  
IF = 500 mA  
0.65  
VR = 0 V, f = 1 MHz  
60  
pF  
ns  
IF = IR = 100 mA  
4.5  
Irr = 10 mA, RL = 100 Ω  
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a  
human body and the leakage of current from the operating equipment.  
2. Rated input/output frequency: 100 MHz  
3. * : trr measuring circuit  
Bias Application Unit N-50BU  
Input Pulse  
tp  
Output Pulse  
trr  
tr  
t
10%  
IF  
t
A
90%  
VR  
Irr = 10 mA  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
IF = 100 mA  
IR = 100 mA  
RL = 100 Ω  
Pulse Generator  
(PG-10N)  
Rs = 50 Ω  
W.F.Analyzer  
(SAS-8130)  
Ri = 50 Ω  
1

与MA3X789相关器件

型号 品牌 获取价格 描述 数据表
MA3X791 PANASONIC

获取价格

Silicon epitaxial planar type
MA3XD11 TYSEMI

获取价格

IF(AV) = 1 A rectification is possible
MA3XD11 PANASONIC

获取价格

Silicon epitaxial planar type
MA3XD11 KEXIN

获取价格

Schottky Barrier Diodes
MA3XD14E TYSEMI

获取价格

Mini type 3-pin package
MA3XD14E KEXIN

获取价格

Schottky Barrier Diodes
MA3XD14E PANASONIC

获取价格

Silicon epitaxial planar type (cathode common)
MA3XD15 PANASONIC

获取价格

Silicon epitaxial planar type
MA3XD15 KEXIN

获取价格

Schottky Barrier Diodes
MA3XD15 TYSEMI

获取价格

Mini type 3-pin package