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MA3X789 PDF预览

MA3X789

更新时间: 2024-09-23 22:14:59
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
2页 48K
描述
Silicon epitaxial planar type

MA3X789 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.71其他特性:HIGH SPEED SWITCH
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.65 V
JEDEC-95代码:TO-236JESD-30 代码:R-PDSO-G3
JESD-609代码:e6湿度敏感等级:1
最大非重复峰值正向电流:2 A元件数量:1
端子数量:3最高工作温度:125 °C
最大输出电流:0.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:60 V最大反向恢复时间:0.0045 µs
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin/Bismuth (Sn/Bi)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MA3X789 数据手册

 浏览型号MA3X789的Datasheet PDF文件第2页 
Schottky Barrier Diodes (SBD)  
MA3X789  
Silicon epitaxial planar type  
Unit : mm  
2.8 + 00..32  
For super-high speed switching circuit  
For small current rectification  
0.65 0.15  
1.5 + 00..2055  
0.65 0.15  
1
2
I Features  
3
Allowing to rectify under (IF(AV) = 200 mA) condition  
Reverse voltage VR (DC value) = 60 V guaranteed  
I Absolute Maximum Ratings Ta = 25°C  
Parameter  
Reverse voltage (DC)  
Peak reverse voltage  
Average forward current  
Symbol  
VR  
Rating  
60  
Unit  
V
0.1 to 0.3  
0.4 0.2  
VRM  
60  
V
1 : Anode  
2 : NC  
3 : Cathode  
IF(AV)  
IFSM  
500  
2
mA  
A
JEDEC : TO-236  
EIAJ : SC-59  
Non-repetitive peak forward  
surge current*  
Mini Type Package (3-pin)  
Junction temperature  
Storage temperature  
Tj  
125  
°C  
°C  
Marking Symbol: M3W  
Tstg  
55 to +125  
Internal Connection  
Note)  
*
: The peak-to-peak value in one cycle of 50 Hz sine-wave  
(non-repetitive)  
1
2
3
I Electrical Characteristics Ta = 25°C  
Parameter  
Reverse current (DC)  
Forward voltage (DC)  
Terminal capacitance  
Reverse recovery time*  
Symbol  
Conditions  
Min  
Typ  
Max  
100  
Unit  
µA  
V
IR  
VF  
Ct  
trr  
VR = 50 V  
IF = 500 mA  
0.65  
VR = 0 V, f = 1 MHz  
60  
pF  
ns  
IF = IR = 100 mA  
4.5  
Irr = 10 mA, RL = 100 Ω  
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a  
human body and the leakage of current from the operating equipment.  
2. Rated input/output frequency: 100 MHz  
3. * : trr measuring circuit  
Bias Application Unit N-50BU  
Input Pulse  
tp  
Output Pulse  
trr  
tr  
t
10%  
IF  
t
A
90%  
VR  
Irr = 10 mA  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
IF = 100 mA  
IR = 100 mA  
RL = 100 Ω  
Pulse Generator  
(PG-10N)  
Rs = 50 Ω  
W.F.Analyzer  
(SAS-8130)  
Ri = 50 Ω  
1

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