5秒后页面跳转
MA3X727 PDF预览

MA3X727

更新时间: 2024-09-23 22:14:59
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
3页 57K
描述
Silicon epitaxial planar type

MA3X727 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.81其他特性:HIGH RELIABILITY, HIGH SPEED SWITCH
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.36 V
JEDEC-95代码:TO-236JESD-30 代码:R-PDSO-G3
JESD-609代码:e6湿度敏感等级:1
最大非重复峰值正向电流:1 A元件数量:1
端子数量:3最高工作温度:150 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:50 V最大反向恢复时间:0.003 µs
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin/Bismuth (Sn/Bi)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED

MA3X727 数据手册

 浏览型号MA3X727的Datasheet PDF文件第2页浏览型号MA3X727的Datasheet PDF文件第3页 
Schottky Barrier Diodes (SBD)  
MA3X727 (MA727)  
Silicon epitaxial planar type  
Unit: mm  
For super high speed switching  
For small current rectification  
+0.10  
–0.05  
0.40  
+0.10  
–0.06  
0.16  
3
Features  
VR = 50 V is guaranteed  
IF(AV) = 200 mA rectification is possible  
Mini type 3-pin package  
1
2
(0.95) (0.95)  
1.9±0.1  
+0.20  
2.90  
–0.05  
10˚  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
VR  
Rating  
50  
Unit  
V
Reverse voltage (DC)  
Repetitive peak reverse-voltage  
Peak forward current  
1: Anode  
2: N.C.  
3: Cathode  
VRRM  
IFM  
IF(AV)  
IFSM  
50  
V
300  
200  
1
mA  
mA  
A
EIAJ: SC-59  
Mini3-G1 Package  
Average forward current  
Non-repetitive peak forward-  
surge-current *  
Marking Symbol: M1Z  
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Internal Connection  
Tstg  
55 to +150  
3
Note) : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)  
*
1
2
Electrical Characteristics Ta = 25°C  
Parameter  
Reverse current (DC)  
Forward voltage (DC)  
Symbol  
IR  
Conditions  
Min  
Typ  
Max  
200  
Unit  
µA  
V
V
R = 50 V  
VF1  
VF2  
Ct  
IF = 30 mA  
0.36  
0.55  
IF = 200 mA  
V
Terminal capacitance  
Reverse recovery time *  
V
R = 0 V, f = 1 MHz  
IF = IR = 100 mA  
rr = 10 mA, RL = 100 Ω  
30  
pF  
ns  
trr  
3.0  
I
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body  
and the leakage of current from the operating equipment.  
2. Rated input/output frequency: 1 GHz  
Bias Application Unit N-50BU  
3. : t measuring instrument  
*
rr  
Input Pulse  
Output Pulse  
trr  
tp  
tr  
t
10%  
IF  
t
A
90%  
VR  
I
rr = 10 mA  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
I
I
R
F = 100 mA  
R = 100 mA  
L = 100 Ω  
Pulse Generator  
(PG-10N)  
Wave Form Analyzer  
(SAS-8130)  
Rs = 50 Ω  
Ri = 50 Ω  
Note) The part number in the parenthesis shows conventional part number.  
Publication date: January 2002  
SKH00082BED  
1

与MA3X727相关器件

型号 品牌 获取价格 描述 数据表
MA3X727_13 PANASONIC

获取价格

Silicon epitaxial planar type For super high speed switching For small current rectificati
MA3X730 PANASONIC

获取价格

Silicon epitaxial planar type
MA3X740 PANASONIC

获取价格

Silicon epitaxial planar type
MA3X748 PANASONIC

获取价格

Silicon epitaxial planar type
MA3X786 PANASONIC

获取价格

Silicon epitaxial planar type
MA3X786D PANASONIC

获取价格

Silicon epitaxial planar type
MA3X786E PANASONIC

获取价格

Silicon epitaxial planar type
MA3X787 PANASONIC

获取价格

Silicon epitaxial planar type
MA3X788 PANASONIC

获取价格

Silicon epitaxial planar type
MA3X789 PANASONIC

获取价格

Silicon epitaxial planar type