Datasheet > MA3X786

MA3X786

更新时间： 2024-09-23 22:14:59

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
2页	49K
描述
Silicon epitaxial planar type

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中文翻译

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数据手册

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MA3X786 数据手册

Schottky Barrier Diodes (SBD)

MA3X786

Silicon epitaxial planar type

Unit : mm

2.8 −⁺0⁰.^.3²

1.5 −⁺0⁰.^.205⁵

0.65 0.15

For super-high speed switching circuit

For small current rectification

0.65 0.15

I Features

•

Allowing to rectify under (I_F(AV)= 100 mA) condition

Optimum for high-frequency rectification because of its short

reverse recovery time (t_rr)

•

Low V_F(forward rise voltage), with high rectification efficiency

I Absolute Maximum Ratings T_a= 25°C

0.1 to 0.3

0.4 0.2

Parameter

Symbol

V_R

Rating

Unit

Reverse voltage (DC)

Repetitive peak reverse voltage

Peak forward current

1 : Anode

2 : NC

3 : Cathode

V_RRM

I_FM

I_F(AV)

I_FSM

JEDEC : TO-236

EIAJ : SC-59

300

100

Mini Type Package(3-pin)

Average forward current

Marking Symbol: M3T

Non-repetitive peak forward

surge current^*

Internal Connection

Junction temperature

Storage temperature

T_j

125

°C

T_stg

−55 to +125

Note)

: The peak-to-peak value in one cycle of 50 Hz sine-wave

(non-repetitive)

I Electrical Characteristics T_a= 25°C

Parameter

Reverse current (DC)

Forward voltage (DC)

Terminal capacitance

Reverse recovery time^*

Symbol

Conditions

Min

Typ

Max

Unit

µA

I_R

V_F

C_t

t_rr

V_R= 30 V

I_F= 100 mA

0.55

V_R= 0 V, f = 1 MHz

I_F= I_R= 100 mA

I_rr= 10 mA, R_L= 100 Ω

Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a

human body and the leakage of current from the operating equipment.

ꢀ

2. Rated input/output frequency: 250 MHz

3. * : t_rrmeasuring circuit

Bias Application Unit N-50BU

Input Pulse

t_p

Output Pulse

t_rr

t_r

10%

I_F

90%

V_R

I_rr= 10 mA

t_p= 2 µs

t_r= 0.35 ns

δ = 0.05

I_F= 100 mA

I_R= 100 mA

R_L= 100 Ω

Pulse Generator

(PG-10N)

R_s= 50 Ω

W.F.Analyzer

(SAS-8130)

R_i= 50 Ω

中文翻译

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