5秒后页面跳转
MA3X200F PDF预览

MA3X200F

更新时间: 2024-09-23 22:14:59
品牌 Logo 应用领域
松下 - PANASONIC 整流二极管光电二极管
页数 文件大小 规格书
2页 49K
描述
Silicon epitaxial planar type

MA3X200F 技术参数

生命周期:Obsolete包装说明:R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.84Is Samacsys:N
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.2 VJESD-30 代码:R-PDSO-G3
最大非重复峰值正向电流:0.5 A端子数量:3
最高工作温度:150 °C最大输出电流:0.1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
最大重复峰值反向电压:80 V最大反向恢复时间:0.1 µs
子类别:Rectifier Diodes表面贴装:YES
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

MA3X200F 数据手册

 浏览型号MA3X200F的Datasheet PDF文件第2页 
Switching Diodes  
MA3X200F  
Silicon epitaxial planar type  
2.8 + 00..32  
Unit : mm  
1.5 + 00..2055  
0.65 0.15  
For switching circuits  
0.65 0.15  
1
2
I Features  
Two elements contained in one package, allowing high-density  
mounting  
3
Soft recovery characteristic (Trr: 100 ns)  
Small terminal capacitance, Ct  
I Absolute Maximum Ratings Ta = 25°C  
Parameter  
Reverse voltage (DC)  
Peak reverse voltage  
Symbol  
VR  
Rating  
80  
Unit  
V
0.1 to 0.3  
0.4 0.2  
1 : Anode 1  
2 : Cathode 2  
3 : Cathode 1  
Anode 2  
VRM  
IF  
80  
V
Single  
Series  
Single  
Series  
Single  
Series  
100  
mA  
Forward voltage  
(DC)  
75  
Mini Type Package (3-pin)  
IFM  
225  
mA  
mA  
Peak forward  
current  
Marking Symbol: M5M  
Internal Connection  
170  
IFSM  
500  
Non-repetitive peak  
*
forward surge current  
325  
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
1
2
Tstg  
55 to +150  
3
Note)  
* : t = 1 s  
I Electrical Characteristics Ta = 25°C  
Parameter  
Symbol  
IR1  
Conditions  
Min  
80  
Typ  
Max  
10  
Unit  
nA  
nA  
V
Reverse current (DC)  
VR = 75 V  
IR2  
VR = 5 V, Ta = 85°C  
IF = 100 mA  
20  
Forward voltage (DC)  
Reverse voltage (DC)  
Terminal capacitance  
Reverse recovery time*  
VF  
1.2  
VR  
IR = 100 µA  
V
Ct  
VR = 0 V, f = 1 MHz  
2.5  
pF  
ns  
trr  
IF = 10 mA, VR = 6 V  
100  
Irr = 0.1 · IR, RL = 100 Ω  
Note) 1. Rated input/output frequency: 100 MHz  
2. * : trr measuring circuit  
Bias Application Unit N-50BU  
Input Pulse  
tp  
Output Pulse  
trr  
tr  
t
10%  
IF  
t
A
90%  
VR  
Irr = 0.1 · IR  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
IF = 10 mA  
VR = 6 V  
RL = 100 Ω  
Pulse Generator  
(PG-10N)  
Rs = 50 Ω  
W.F.Analyzer  
(SAS-8130)  
Ri = 50 Ω  
1

与MA3X200F相关器件

型号 品牌 获取价格 描述 数据表
MA3X551 PANASONIC

获取价格

Silicon epitaxial planar type
MA3X555 PANASONIC

获取价格

Silicon epitaxial planar type
MA3X557 PANASONIC

获取价格

Silicon epitaxial planar type
MA3X558 PANASONIC

获取价格

Silicon epitaxial planar type
MA3X701 PANASONIC

获取价格

Silicon epitaxial planar type
MA3X703 PANASONIC

获取价格

Silicon epitaxial planar type
MA3X704 PANASONIC

获取价格

Silicon epitaxial planar type
MA3X704A PANASONIC

获取价格

Silicon epitaxial planar type
MA3X704D PANASONIC

获取价格

Silicon epitaxial planar type
MA3X704E PANASONIC

获取价格

Silicon epitaxial planar type