Datasheet > MA3X157A

MA3X157A

更新时间： 2024-11-11 22:14:59

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
2页	50K
描述
Silicon epitaxial planar type

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中文翻译

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数据手册
替代型号

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MA3X157A 数据手册

Switching Diodes

MA3X157A

Silicon epitaxial planar type

Unit : mm

2.8 −⁺0⁰.^.3²

1.5 −⁺0⁰.^.205⁵

For switching circuits

0.65 0.15

I Features

• High switching speed

• Small terminal capacitance, C_t

• Both chips have even characteristics

• Can be connected in series

I Absolute Maximum Ratings T_a= 25°C

0.1 to 0.3

0.4 0.2

Parameter

Reverse voltage (DC)

Peak reverse voltage

Symbol

V_R

Rating

Unit

1 : Anode 1

2 : Cathode 2

3 : Anode 2

Cathode 1

V_RM

I_F

JEDEC : TO-236

EIAJ : SC-59

Mini Type Package (3-pin)

Single

Series

Single

Series

Single

Series

100

Forward current

(DC)

Marking Symbol: MS

I_FRM

225

Repetitive peak

forward current

145

Internal Connection

I_FSM

500

Non-repetitive peak

forward surge current

325

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

Note)

* : t = 1 s

I Electrical Characteristics T_a= 25°C

Parameter

Reverse current (DC)

Forward voltage (DC)

Reverse voltage (DC)

Terminal capacitance

Reverse recovery time^*

Symbol

I_R

Conditions

Min

Typ

Max

0.1

Unit

µA

V_R= 75 V

V_F

I_F= 100 mA

1.2

V_R

I_R= 100 µA

C_t

V_R= 0 V, f = 1 MHz

t_rr

I_F= 10 mA, V_R= 6 V

I_rr= 0.1 · I_R, R_L= 100 Ω

Note) 1. Rated input/output frequency: 100 MHz

2. * : t_rrmeasuring circuit

Bias Application Unit N-50BU

Input Pulse

t_p

Output Pulse

t_r

10%

t_rr

I_F

90%

V_R

I_rr= 0.1 · I_R

t_p= 2 µs

t_r= 0.35 ns

δ = 0.05

I_F= 10 mA

V_R= 6 V

R_L= 100 Ω

Pulse Generator

(PG-10N)

R_s= 50 Ω

W.F.Analyzer

(SAS-8130)

R_i= 50 Ω

中文翻译

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MA3X157A 替代型号

型号	品牌	替代类型	描述	数据表
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