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MA3X028TB PDF预览

MA3X028TB

更新时间: 2024-11-11 22:26:43
品牌 Logo 应用领域
松下 - PANASONIC PIN二极管电阻器可变电阻器光电二极管
页数 文件大小 规格书
3页 80K
描述
Silicon epitaxial planar type variable resistor

MA3X028TB 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.91Is Samacsys:N
其他特性:HIGH RELIABILITY配置:SINGLE
二极管元件材料:SILICON二极管类型:PIN DIODE
频带:VERY HIGH FREQUENCYJEDEC-95代码:TO-236
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.15 W认证状态:Not Qualified
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MA3X028TB 数据手册

 浏览型号MA3X028TB的Datasheet PDF文件第2页浏览型号MA3X028TB的Datasheet PDF文件第3页 
Varistors  
MA3X028 Series (MA28 Series)  
Silicon epitaxial planar type  
Unit: mm  
+0.10  
–0.05  
0.40  
3
For reduced voltage and temperature compensation  
+0.10  
–0.06  
0.16  
Features  
Extremely small reverse current IR  
High reliability with planar structure  
Wide forward voltage VF range  
1
2
(0.95) (0.95)  
1.9 0.1  
+0.20  
2.90  
–0.05  
10˚  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
V
Reverse voltage  
VR  
6
150  
MA3X0280A/B  
IFM  
mA  
Peak forward  
current  
1: Anode  
2: N.C.  
3: Cathode  
MA3X028WA/WB  
MA3X028TA/TB  
100  
70  
EIAJ: SC-59  
Mini3-G1 Package  
Power dissipation  
PD  
Tj  
150  
mW  
°C  
Marking Symbol  
Junction temperature  
Storage temperature  
125  
MA3X0280A : MD  
MA3X0280B : ME  
MA3X028WA : MF  
MA3X028WB : MK  
MA3X028TA : ML  
MA3X028TB : MM  
Tstg  
55 to +125  
°C  
1
Electrical Characteristics Ta = 25°C 3°C *  
Parameter  
Forward voltage MA3X028WA/WB  
MA3X028TA/TB  
Symbol  
Conditions  
Min  
0.77  
1.15  
0.56  
0.59  
1.18  
1.26  
1.76  
1.88  
Typ  
Max  
Unit  
VF1  
IF = 10 µA  
V
Forward voltage MA3X0280A  
MA3X0280B  
VF2  
IF = 1.5 mA  
IF = 3 mA  
0.61  
0.64  
1.28  
1.36  
1.92  
2.04  
1.0  
V
MA3X028WA  
MA3X028WB  
MA3X028TA  
MA3X028TB  
Reverse current  
IR  
VR = 6 V  
IF = 3 mA  
µA  
MA3X0280A/B  
MA3X028WA/B  
MA3X028TA/B  
−∆VF/T  
2.0  
4.6  
6.5  
mV/°C  
Temperature  
coefficient of  
forward voltage *  
2
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.  
2. Absolute frequency of input and output is 100 MHz  
3. 1: The temperature must be controlled 25°C for V measurement. V value measured at other temprature must be adjusted  
*
F
F
to VF (25°C).  
2: T = 25°C to 150°C  
*
j
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: March 2004  
SKB00003CED  
1

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