MA3V175D

更新时间： 2024-11-11 22:26:43

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
2页	52K
描述
Silicon epitaxial planar type

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中文翻译

获取价格

数据手册

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MA3V175D 数据手册

Switching Diodes

MA3V175D, MA3V176D

Silicon epitaxial planar type

Unit : mm

4.0 0.2

For switching circuits

I Features

•

Short reverse recovery time t_rr

Small terminal capacitance, C_t

I Absolute Maximum Ratings T_a= 25°C

marking

Parameter

Symbol

V_R

Rating

Unit

MA3V175D

MA3V176D

MA3V175D

MA3V176D

Single

Reverse voltage

(DC)

V_RM

Peak reverse

voltage

1.27 1.27

2.54 0.15

1 : Cathode

2 : Anode

3 : Cathode

I_F

100

Forward current

(DC)

New S-Type Package

Double

150

Single

I_FM

225

Peak forward

current

Internal Connection

Double

340

Single

I_FSM

500

Non-repetitive peak

forward surge current

Double

750

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

Note)

* : t = 1 s

I Electrical Characteristics T_a= 25°C

Parameter

Symbol

I_R

Conditions

Min

Typ

Max

0.1

Unit

Reverse current (DC)

MA3V175D

MA3V176D

V_R= 35 V

V_R= 75 V

µA

0.1

Forward voltage (DC)

V_F

V_R

I_F= 100 mA

1.2

Reverse voltage (DC) MA3V175D

MA3V176D

I_R= 100 µA

Terminal capacitance

Reverse recovery time^*

C_t

t_rr

V_R= 0 V, f = 1 MHz

I_F= 10 mA, V_R= 6 V

I_rr= 0.1 · I_R, R_L= 100 Ω

Note) 1. Rated input/output frequency: 100 MHz

2. * : t_rrmeasuring circuit

Input Pulse

DUT

Output Pulse

t_rr

t_r

t_P

I_F

Sampling

10%

Oscilloscope

R_i= 50 Ω

I_rr= 0.1·I

90%

I_F

R_s= 50 Ω

V = V_R+ I_R·R_S

t_p= 100 ns

t_r= 0.6 ns

δ = 0.05

I_F= 10 mA

V_R= 6 V

R_L= 100 Ω

中文翻译

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