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MA3V175D PDF预览

MA3V175D

更新时间: 2024-11-11 22:26:43
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
2页 52K
描述
Silicon epitaxial planar type

MA3V175D 数据手册

 浏览型号MA3V175D的Datasheet PDF文件第2页 
Switching Diodes  
MA3V175D, MA3V176D  
Silicon epitaxial planar type  
Unit : mm  
4.0 0.2  
For switching circuits  
I Features  
Short reverse recovery time trr  
Small terminal capacitance, Ct  
I Absolute Maximum Ratings Ta = 25°C  
marking  
Parameter  
Symbol  
VR  
Rating  
40  
Unit  
V
1
2
3
MA3V175D  
MA3V176D  
MA3V175D  
MA3V176D  
Single  
Reverse voltage  
(DC)  
80  
VRM  
40  
V
Peak reverse  
voltage  
1.27 1.27  
2.54 0.15  
1 : Cathode  
2 : Anode  
3 : Cathode  
80  
IF  
100  
mA  
mA  
mA  
Forward current  
(DC)  
New S-Type Package  
Double  
150  
Single  
IFM  
225  
Peak forward  
current  
Internal Connection  
Double  
340  
Single  
IFSM  
500  
Non-repetitive peak  
forward surge current  
*
Double  
750  
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
1
2
3
Tstg  
55 to +150  
Note)  
* : t = 1 s  
I Electrical Characteristics Ta = 25°C  
Parameter  
Symbol  
IR  
Conditions  
Min  
Typ  
Max  
0.1  
Unit  
Reverse current (DC)  
MA3V175D  
MA3V176D  
VR = 35 V  
VR = 75 V  
µA  
0.1  
Forward voltage (DC)  
VF  
VR  
IF = 100 mA  
1.2  
V
V
Reverse voltage (DC) MA3V175D  
MA3V176D  
IR = 100 µA  
40  
80  
Terminal capacitance  
Reverse recovery time*  
Ct  
trr  
VR = 0 V, f = 1 MHz  
4
pF  
ns  
IF = 10 mA, VR = 6 V  
10  
Irr = 0.1 · IR, RL = 100 Ω  
Note) 1. Rated input/output frequency: 100 MHz  
2. * : trr measuring circuit  
Input Pulse  
DUT  
Output Pulse  
trr  
tr  
tP  
IF  
t
0
Sampling  
10%  
Oscilloscope  
Ri = 50 Ω  
Irr = 0.1·I  
R
90%  
IF  
Rs = 50 Ω  
V = VR + IR·RS  
tp = 100 ns  
tr = 0.6 ns  
δ = 0.05  
IF = 10 mA  
VR = 6 V  
RL = 100 Ω  
1

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