Datasheet > MA3SE02

MA3SE02

更新时间： 2024-11-12 11:22:11

品牌	Logo	应用领域
松下 - PANASONIC		二极管
页数	文件大小	规格书
3页	57K
描述
Schottky Barrier Diodes (SBD)

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中文翻译

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数据手册

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MA3SE02 数据手册

Schottky Barrier Diodes (SBD)

MA3SE02

Silicon epitaxial planar type

Unit: mm

0.28 0.0ꢀ

For cellular phone

+0.0ꢀ

0.12

–0.02

ꢀ Features

•

High-frequency wave detection is possible

Low forward voltage V_F

Small terminal capacitance C_t

SS-Mini type 3-pin package

0.28 ^0.0ꢀ

(0.ꢀ1)

(0.80) (0.80)

+0.0ꢀ

0.60

–0.03

+0.0ꢀ

1.60

–0.03

3°

ꢀ Absolute Maximum Ratings T_a= 25°C

Parameter

Reverse voltage (DC)

Peak reverse voltage

Forward current (DC) Single

Seriesꢀ

Symbol

V_R

Rating

Unit

1 : Anode 1

2 : Cathode 2

3 : Cathode 1

Anode 2

V_RM

I_F

100

EIAJ : SC-89

SSMini3-F2 Package

Peak forward current

Single

I_FM

Marking Symbol: M6B

Seriesꢀ

Junction temperature

Storage temperature

T_j

125

°C

Internal Connection

T_stg

−55 to +125

ꢀ Absolute Maximum Ratings T_a= 25°C 3°C

Parameter

Reverse current (DC)

Forward voltage (DC)

Symbol

Conditions

Min

Typ

Max

200

0.40

1.0

Unit

I_R

V_F1

V_F2

C_t

V_R= 15 V

I_F= 1 mA

I_F= 35 mA

Terminal capacitance

V_R= 0 V, f = 1 MHz

I_F= 5 mA

1.2

Forword dynamic resistance

r_f

Ω

Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

2. Rated input/output frequency: 2 GHz

Publication date: August 2001

SKH00067AED

12 3

中文翻译

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