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MA3SE02 PDF预览

MA3SE02

更新时间: 2024-11-12 11:22:11
品牌 Logo 应用领域
松下 - PANASONIC 二极管
页数 文件大小 规格书
3页 57K
描述
Schottky Barrier Diodes (SBD)

MA3SE02 数据手册

 浏览型号MA3SE02的Datasheet PDF文件第2页浏览型号MA3SE02的Datasheet PDF文件第3页 
Schottky Barrier Diodes (SBD)  
MA3SE02  
Silicon epitaxial planar type  
Unit: mm  
0.28 0.0ꢀ  
For cellular phone  
+0.0ꢀ  
0.12  
–0.02  
3
Features  
High-frequency wave detection is possible  
Low forward voltage VF  
Small terminal capacitance Ct  
SS-Mini type 3-pin package  
1
2
0.28 0.0ꢀ  
(0.ꢀ1)  
(0.ꢀ1)  
(0.80) (0.80)  
+0.0ꢀ  
0.60  
–0.03  
+0.0ꢀ  
1.60  
–0.03  
3°  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Reverse voltage (DC)  
Peak reverse voltage  
Forward current (DC) Single  
Series  
Symbol  
VR  
Rating  
Unit  
V
20  
1 : Anode 1  
2 : Cathode 2  
3 : Cathode 1  
Anode 2  
VRM  
IF  
20  
V
35  
mA  
25  
100  
EIAJ : SC-89  
SSMini3-F2 Package  
Peak forward current  
Single  
IFM  
mA  
Marking Symbol: M6B  
Seriesꢀ  
70  
Junction temperature  
Storage temperature  
Tj  
125  
°C  
°C  
Internal Connection  
Tstg  
55 to +125  
3
1
2
Absolute Maximum Ratings Ta = 25°C 3°C  
Parameter  
Reverse current (DC)  
Forward voltage (DC)  
Symbol  
Conditions  
Min  
Typ  
Max  
200  
0.40  
1.0  
Unit  
nA  
V
IR  
VF1  
VF2  
Ct  
VR = 15 V  
IF = 1 mA  
IF = 35 mA  
Terminal capacitance  
VR = 0 V, f = 1 MHz  
IF = 5 mA  
1.2  
pF  
Forword dynamic resistance  
rf  
9
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body  
and the leakage of current from the operating equipment.  
2. Rated input/output frequency: 2 GHz  
Publication date: August 2001  
SKH00067AED  
1

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