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MA3S795E0L PDF预览

MA3S795E0L

更新时间: 2024-11-12 14:53:03
品牌 Logo 应用领域
松下 - PANASONIC 光电二极管
页数 文件大小 规格书
4页 447K
描述
Rectifier Diode, Schottky, 2 Element, 0.03A, 30V V(RRM), Silicon, ROHS COMPLIANT, SSMINI3-F2, 3 PIN

MA3S795E0L 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-PDSO-F3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.82配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-F3元件数量:2
端子数量:3最高工作温度:125 °C
最大输出电流:0.03 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:30 V
最大反向恢复时间:0.001 µs表面贴装:YES
技术:SCHOTTKY端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MA3S795E0L 数据手册

 浏览型号MA3S795E0L的Datasheet PDF文件第2页浏览型号MA3S795E0L的Datasheet PDF文件第3页浏览型号MA3S795E0L的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
Schottky Barrier Diodes (SBD)  
MA3S795E (MA795WK)  
Silicon epitaxial planar type  
For switching  
Features  
Package  
High-density mounting is possible  
Code  
Forward voltage VF , optimum for low voltage rectication:VF < 0.3 V  
Optimum for high frequency rectication because of its short  
reverse recovery time trr  
SSMini3-F2  
Pin Name  
1:Anode 1  
2:node 2  
de  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Reverse voltage  
Maximum peak reverse voltage  
Symbol  
VR  
Ratin
Unit  
V
30  
Marking Symbol: M3D  
Internal Connection  
VRM  
V
Single  
Forward current  
I
mA  
mA  
3
Double  
Single  
20  
150  
Peak forward current  
IFM  
Dole  
110  
Junction temperature  
Storage time  
Tj  
125  
°C  
°C  
1
2
Tstg  
5 to +125  
Electcal Charistics Ta 25°C±3°
Prameter  
Forward voltge  
Symbol  
VF1  
VF2  
IR  
Conditions  
Min  
Typ  
Max  
0.3  
1.0  
30  
Unit  
IF = 1 mA  
IF = 30 mA  
VR = 30 V  
V
Reverse curren
mA  
Terminal capacitan
Ct  
VR = 1 V, f = 1 MHz  
1.5  
1.0  
pF  
IF = IR = 10 mA, Irr = 1 mA,  
Reverse recovery time *  
trr  
ns  
%
RL = 100 W  
VIN = 3 V(peak) , f = 30 MHz  
Detection efciency  
65  
η
RL = 3.9 kW, CL = 10 pF  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.  
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage  
of current from the operating equipment.  
3. Absolute frequency of input and output is 2 GHz  
4. : trr measurement circuit  
*
Bias Application Unit (N-50BU)  
Input Pulse  
tp  
Output Pulse  
trr  
tr  
t
10%  
IF  
t
A
90%  
VR  
I
rr = 1 mA  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
I
I
F = 10 mA  
R = 10 mA  
Pulse Generator  
(PG-10N)  
Rs = 50 Ω  
Wave Form Analyzer  
R
L = 100 Ω  
(SAS-8130)  
Ri = 50 Ω  
Note) The part number in the parenthesis shows conventional part number.  
Publication date: October 2008  
SKH00235AED  
1

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