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MA3SD05FG PDF预览

MA3SD05FG

更新时间: 2024-09-23 19:57:19
品牌 Logo 应用领域
松下 - PANASONIC 光电二极管
页数 文件大小 规格书
3页 230K
描述
Rectifier Diode, Schottky, 2 Element, 0.1A, Silicon, ROHS COMPLIANT, SSMINI3-F3, 3 PIN

MA3SD05FG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.74配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-F3JESD-609代码:e6
湿度敏感等级:1元件数量:2
端子数量:3最大输出电流:0.1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大反向恢复时间:0.002 µs
表面贴装:YES技术:SCHOTTKY
端子面层:Tin/Bismuth (Sn/Bi)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MA3SD05FG 数据手册

 浏览型号MA3SD05FG的Datasheet PDF文件第2页浏览型号MA3SD05FG的Datasheet PDF文件第3页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
Schottky Barrier Diodes (SBD)  
MA3SD05F  
Silicon epitaxial planar type  
Unit: mm  
0.28 0.05  
For high frequency rectification  
+0.05  
0.12  
–0.02  
3
Features  
Series connection  
High-density mounting is possible  
1
2
0.28 0.05  
(0.51)  
(0.51)  
+0.05  
Absolute Maximum Ratings Ta = 25°C  
0.60  
–0.03  
Parameter  
Reverse voltage  
Maximum peak reverse voltage  
Symbol  
VR  
Rating  
Unt  
V
45  
VRM  
IF  
4
1
V
Forward current  
Single  
Series  
Single  
Seris  
mA  
1: Anode 1  
2 : Cathode 2  
3 : Cathode 1  
Anod2  
5  
Peak forward  
current  
300  
mA  
A
EIAJ : SC-81  
SSMini3-F2 Package  
225  
Non-repetitive peak Single  
forward surge current * Series  
Junction temperature  
IFSM  
1
Marking Symbol: M5C  
0.75  
25  
Internal Connection  
Tj  
°C  
°C  
Storage temeratur
Tst
to +125  
3
Nte) : he p-peak value in oe cycle ine wave (non-repetitive)  
*
1
2
Electricharacteristics Ta = 25°C 3°C  
Forward vo
Symbol  
Conditions  
Min  
Typ  
Max  
0.60  
5
Unit  
V
VF  
IR  
IF = 100 mA  
VR = 40 V  
0.54  
Reverse current  
µA  
pF  
ns  
Terminal capacitance  
Reverse recovery time *  
Ct  
trr  
VR = 0 V, f = 1 MHz  
12  
18  
IF = IR = 100 mA  
2.0  
Irr = 10 mA, RL = 100 Ω  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.  
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body  
and the leakage of current from the operating equipment.  
3. Absolute frequency of input and output is 250 MHz  
4. : trr measurement circuit  
*
Bias Application Unit N-50BU  
Input Pulse  
tp  
Output Pulse  
trr  
tr  
t
10%  
IF  
t
A
90%  
VR  
Irr = 10 mA  
IF = 100 mA  
IR = 100 mA  
RL = 100 Ω  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
Pulse Generator  
(PG-10N)  
Rs = 50 Ω  
Wave Form Analyzer  
(SAS-8130)  
Ri = 50 Ω  
Publication date: February 2005  
SKH00137BED  
1

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