5秒后页面跳转
MA3S7950G PDF预览

MA3S7950G

更新时间: 2024-11-12 21:18:55
品牌 Logo 应用领域
松下 - PANASONIC 光电二极管
页数 文件大小 规格书
4页 205K
描述
Rectifier Diode, Schottky, 1 Element, 0.03A, Silicon, ROHS COMPLIANT, SSMINI3-F3, 3 PIN

MA3S7950G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.84配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-F3JESD-609代码:e6
湿度敏感等级:1元件数量:1
端子数量:3最大输出电流:0.03 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大反向恢复时间:0.001 µs
表面贴装:YES技术:SCHOTTKY
端子面层:Tin/Bismuth (Sn/Bi)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

MA3S7950G 数据手册

 浏览型号MA3S7950G的Datasheet PDF文件第2页浏览型号MA3S7950G的Datasheet PDF文件第3页浏览型号MA3S7950G的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
Schottky Barrier Diodes (SBD)  
MA3S7950G  
Silicon epitaxial planar type  
For high speed switching  
For wave detection  
Package  
Code  
Features  
SSMini3-F3  
Pin Name  
1: A
2: N
High-density mounting is possible  
Forward voltage VF , optimum for low voltage rectificatin  
Low VF type of MA3X704A  
Optimum for high frequency rectification becausof its short  
reverse recovery time trr  
Cath
Marking Symbol: M2M  
Absolute Maximum Ratings Ta = 25°C  
Internal Connection  
Parameter  
Reverse voltage  
mbol  
VR  
Rating  
Unit  
V
3
3
30  
Maximum peak reverse volae  
Forward current  
VRM  
IF  
V
30  
mA  
mA  
°C  
1
2
Peak forward curre
Junction temperaure  
Storage empture  
IFM  
150  
Tj  
12
Tstg  
o +125  
°C  
Electrical Characeristics Ta = 25°C 3°C  
meter  
Forwar
Symbol  
VF1  
VF2  
IR  
Conditions  
Min  
Typ  
Max  
0.3  
1.0  
30  
Unit  
IF = 1 mA  
V
IF = 30 mA  
VR = 30 V  
Reverse curre
µA  
pF  
ns  
Terminal capacitance  
Reverse recovery time *  
Ct  
VR = 1 V, f = 1 MHz  
1.5  
1.0  
trr  
IF = IR = 10 mA  
Irr = 1 mA, RL = 100 Ω  
Detection efficiency  
η
VIN = 3 V(peak) , f = 30 MHz  
RL = 3.9 k, CL = 10 pF  
65  
%
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.  
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body  
and the leakage of current from the operating equipment.  
3. Absolute frequency of input and output is 2 GHz.  
4. : trr measurement circuit  
*
Bias Application Unit (N-50BU)  
Input Pulse  
tp  
Output Pulse  
trr  
tr  
t
10%  
IF  
t
A
90%  
VR  
Irr = 1 mA  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
IF = 10 mA  
IR = 10 mA  
RL = 100 Ω  
Pulse Generator  
(PG-10N)  
Wave Form Analyzer  
(SAS-8130)  
Rs = 50 Ω  
Ri = 50 Ω  
Publication date: October 2007  
SKH00206AED  
1

与MA3S7950G相关器件

型号 品牌 获取价格 描述 数据表
MA3S795D PANASONIC

获取价格

Schottky Barrier Diodes (SBD)
MA3S795DG PANASONIC

获取价格

Mixer Diode, L Band, Silicon, ROHS COMPLIANT, SSMINI3-F3, 3 PIN
MA3S795E PANASONIC

获取价格

Silicon epitaxial planar type
MA3S795E0L PANASONIC

获取价格

Rectifier Diode, Schottky, 2 Element, 0.03A, 30V V(RRM), Silicon, ROHS COMPLIANT, SSMINI3-
MA3SD05 PANASONIC

获取价格

Rectifier Diode, Schottky, 2 Element, 0.1A, 45V V(RRM), Silicon, SSMINI3-F2, SC-89, 3 PIN
MA3SD05F PANASONIC

获取价格

Mixer Diode, Very High Frequency, Silicon, SC-81, 3 PIN
MA3SD05FG PANASONIC

获取价格

Rectifier Diode, Schottky, 2 Element, 0.1A, Silicon, ROHS COMPLIANT, SSMINI3-F3, 3 PIN
MA3SD22F PANASONIC

获取价格

Rectifier Diode, Schottky, 2 Element, 0.03A, 30V V(RRM), Silicon, SC-81, 3 PIN
MA3SD29F PANASONIC

获取价格

Rectifier Diode, Schottky, 2 Element, 0.1A, 30V V(RRM), Silicon, SC-81, 3 PIN
MA3SD29FG PANASONIC

获取价格

Mixer Diode, Very High Frequency, Silicon, ROHS COMPLIANT, SSMINI3-F3, 3 PIN