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MA3S795DG PDF预览

MA3S795DG

更新时间: 2024-11-12 13:10:19
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
2页 49K
描述
Mixer Diode, L Band, Silicon, ROHS COMPLIANT, SSMINI3-F3, 3 PIN

MA3S795DG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.60
风险等级:5.82配置:COMMON ANODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:MIXER DIODE
频带:L BANDJESD-30 代码:R-PDSO-F3
JESD-609代码:e6湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified表面贴装:YES
技术:SCHOTTKY端子面层:Tin/Bismuth (Sn/Bi)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

MA3S795DG 数据手册

 浏览型号MA3S795DG的Datasheet PDF文件第2页 
Schottky Barrier Diodes (SBD)  
MA3S795  
Silicon epitaxial planar type  
Unit : mm  
1.60 0.1  
0.80 0.05  
0.80  
For switching circuits  
1
2
I Features  
Extra-small SS-mini type 3-pin package, allowing high-density  
mounting  
Optimum for low-voltage rectification because of its low forward  
rise voltage (VF) (Low VF type of MA3X704A)  
Optimum for high-frequency rectification because of its short  
reverse recovery time (trr)  
3
0.44  
0.44  
I Absolute Maximum Ratings Ta = 25°C  
0.88 + 00..0035  
Parameter  
Reverse voltage (DC)  
For switching circuits  
Forward current (DC)  
Peak forward current  
Junction temperature  
Storage temperature  
Symbol  
VR  
Rating  
Unit  
V
1 : Anode  
2 : NC  
3 : Cathode  
30  
VRM  
IF  
30  
30  
V
SS-Mini Type Package(3-pin)  
mA  
mA  
°C  
Marking Symbol: M2M  
Internal Connection  
IFM  
150  
Tj  
125  
Tstg  
55 to +125  
°C  
1
2
3
I Electrical Characteristics Ta = 25°C  
Parameter  
Reverse current (DC)  
Forward voltage (DC)  
Symbol  
IR  
Conditions  
Min  
Typ  
Max  
30  
Unit  
µA  
V
VR = 30 V  
IF = 1 mA  
VF1  
VF2  
Ct  
0.3  
1
IF = 30 mA  
V
Terminal capacitance  
Reverse recovery time*  
VR = 1 V, f = 1 MHz  
1.5  
1
pF  
ns  
trr  
IF = IR = 10 mA  
Irr = 1 mA, RL = 100 Ω  
Detection efficiency  
η
Vin = 3 V(peak), f = 30 MHz  
65  
%
RL = 3.9 k, CL = 10 pF  
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a  
human body and the leakage of current from the operating equipment.  
2. Rated input/output frequency: 2 000 MHz  
3. * : trr measuring circuit  
Bias Application Unit N-50BU  
Input Pulse  
tp  
Output Pulse  
trr  
tr  
t
10%  
IF  
t
A
90%  
VR  
Irr = 1 mA  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
IF = 10 mA  
IR = 10 mA  
RL = 100 Ω  
Pulse Generator  
(PG-10N)  
Rs = 50 Ω  
W.F.Analyzer  
(SAS-8130)  
Ri = 50 Ω  
1

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