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MA3S137 PDF预览

MA3S137

更新时间: 2024-11-11 22:46:31
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
2页 50K
描述
Silicon epitaxial planar type

MA3S137 数据手册

 浏览型号MA3S137的Datasheet PDF文件第2页 
Switching Diodes  
MA3S137  
Silicon epitaxial planar type  
Unit : mm  
1.60 ± ±0.1  
0.80 ± ±0.05  
0.80  
For high-speed switching circuits  
1
2
I Features  
Super-small SS-mini type package contained two elements, allow-  
ing high-density mounting  
3
Two diodes are connected in series in the package  
I Absolute Maximum Ratings Ta = 25°C  
Parameter  
Reverse voltage (DC)  
Peak reverse voltage  
Symbol  
VR  
Rating  
80  
Unit  
V
0.44  
0.44  
VRM  
IF  
80  
V
0.88 +±±00..0035  
1 : Anode 1  
2 : Cathode 2  
3 : Cathode 1  
Anode 2  
Single  
Series  
Single  
Series  
Single  
Series  
100  
Forward current  
(DC)  
mA  
65  
IFM  
225  
Peak forward  
current  
mA  
mA  
SS-Mini Type Package (3-pin)  
145  
Marking Symbol: MS  
Internal Connection  
IFSM  
500  
Non-repetitive peak  
*
forward surge current  
325  
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Tstg  
55 to +150  
1
2
Note)  
* : t = 1 s  
3
I Electrical Characteristics Ta = 25°C  
Parameter  
Reverse current (DC)  
Forward voltage (DC)  
Reverse voltage (DC)  
Terminal capacitance  
Reverse recovery time*  
Symbol  
IR  
Conditions  
Min  
80  
Typ  
Max  
100  
1.2  
Unit  
nA  
V
VR = 75 V  
VF  
IF = 100 mA  
IR = 100 µA  
VR  
V
Ct  
VR = 0 V, f = 1 MHz  
2
3
pF  
ns  
trr  
IF = 10 mA, VR = 6 V  
Irr = 0.1 · IR, RL = 100 Ω  
Note) 1. Rated input/output frequency: 100 MHz  
2. * : trr measuring circuit  
Bias Application Unit N-50BU  
Input Pulse  
tp  
Output Pulse  
trr  
tr  
t
10%  
IF  
t
A
90%  
VR  
Irr = 0.1 · IR  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
IF = 10 mA  
VR = 6 V  
RL = 100 Ω  
Pulse Generator  
(PG-10N)  
Rs = 50 Ω  
W.F.Analyzer  
(SAS-8130)  
Ri = 50 Ω  
1

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