Datasheet > JDV2S14E

JDV2S14E

更新时间： 2024-10-29 22:16:47

品牌	Logo	应用领域
东芝 - TOSHIBA		二极管
页数	文件大小	规格书
3页	75K
描述
TOSHIBA Diode Silicon Epitaxial Planar Type

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中文翻译

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JDV2S14E 数据手册

JDV2S14E

TOSHIBA Diode Silicon Epitaxial Planar Type

J D V 2 S 1 4 E

Useful for VCO/TCXO

•

Small Package

1V 2.5V

Low Series Resistance : r = 0.4 Ω (typ.)

High Capacitance Ratio: C /C

= 2.15 (typ.)

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Reverse voltage

125

Junction temperature

Storage temperature range

°C

−55~125

stg

Weight: 0.0014 g

000707EAA1

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general

can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the

buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and

to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or

damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the

most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling

Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal

equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are

neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or

failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy

control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control

instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document

shall be made at the customer’s own risk.

• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by

TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its

use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or

others.

• The information contained herein is subject to change without notice.

2000-09-11 1/3

12 3

中文翻译

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与JDV2S14E相关器件

型号	品牌	获取价格	描述	数据表
JDV2S16FS	TOSHIBA	获取价格	VCO for the UHF band
JDV2S16S	TOSHIBA	获取价格	DIODE UHF BAND, 3.59 pF, SILICON, VARIABLE CAPACITANCE DIODE, 1-1K1A, SESC, 2 PIN, Variabl
JDV2S17S	TOSHIBA	获取价格	VCO for UHF Band Radio
JDV2S19FS	TOSHIBA	获取价格	DIODE UHF BAND, 3.665 pF, SILICON, VARIABLE CAPACITANCE DIODE, 1-1L1A, FSC, 2 PIN, Variabl
JDV2S19S	TOSHIBA	获取价格	TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S22FS	TOSHIBA	获取价格	Silicon Epitaxial Planar Type
JDV2S25FS	TOSHIBA	获取价格	Silicon Epitaxial Planar Type
JDV2S25SC	TOSHIBA	获取价格	DIODE UHF BAND, SILICON, VARIABLE CAPACITANCE DIODE, LEAD FREE, SC2, 1-1R1A, 2 PIN, Variab
JDV2S26FS	TOSHIBA	获取价格	Silicon Epitaxial Planar Type
JDV2S26SC	TOSHIBA	获取价格	DIODE UHF BAND, 15.81 pF, SILICON, VARIABLE CAPACITANCE DIODE, LEAD FREE, ULTRA SMALL, SC2

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