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JDV2S26SC PDF预览

JDV2S26SC

更新时间: 2024-10-30 21:21:35
品牌 Logo 应用领域
东芝 - TOSHIBA 二极管
页数 文件大小 规格书
3页 179K
描述
DIODE UHF BAND, 15.81 pF, SILICON, VARIABLE CAPACITANCE DIODE, LEAD FREE, ULTRA SMALL, SC2, 1-1R1A, 2 PIN, Variable Capacitance Diode

JDV2S26SC 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-CBCC-N2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.83
配置:SINGLE二极管电容容差:3.04%
最小二极管电容比:2.83标称二极管电容:15.81 pF
二极管元件材料:SILICON二极管类型:VARIABLE CAPACITANCE DIODE
频带:ULTRA HIGH FREQUENCYJESD-30 代码:R-CBCC-N2
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:10 V子类别:Varactors
表面贴装:YES端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

JDV2S26SC 数据手册

 浏览型号JDV2S26SC的Datasheet PDF文件第2页浏览型号JDV2S26SC的Datasheet PDF文件第3页 
JDV2S26SC  
TOSHIBA Diode Silicon Epitaxial Planar Type  
JDV2S26SC  
VCO for UHF Band Radio  
Unit: mm  
High Capacitance Ratio : C /C = 2.9 (typ.)  
1V 4V  
Low Series Resistance : r = 0.36 ohm (typ.)  
s
A two-terminal ultra-small package supports high-density mounting  
and the downsizing of end products.  
Lead (Pb)-free.  
0.27±0.02  
0.025±0.0  
0.32±0.03  
Maximum Ratings  
(Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Reverse voltage  
V
10  
150  
V
R
Junction temperature  
T
°C  
°C  
j
Storage temperature range  
T
stg  
-55~150  
1.Anode  
2.Cathode  
SC2  
JEDEC  
JEITA  
TOSHIBA  
1-1R1A  
Weight: 0.00017 g (typ.)  
]
Electrical Characteristics  
(Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Reverse voltage  
Reverse current  
V
I
= 1 µA  
R
10  
1
V
R
I
C
C
V
V
V
= 5 V  
nA  
R
R
R
R
15.33  
5.25  
2.83  
16.29  
5.58  
3.01  
0.51  
= 1 V, f = 1 MHz  
= 4V, f = 1 MHz  
1V  
4V  
Capacitance  
pF  
Capacitance ratio  
Series resistance  
C
/C  
1V 4V  
r
s
V
= 1 V, f = 470 MHz  
0.36  
R
Note: Signal level when capacitance is measured: V = 100 mVrms  
sig  
Marking  
2
1
1
2005-11-07  

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