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JDV2S27FS PDF预览

JDV2S27FS

更新时间: 2024-10-30 14:51:43
品牌 Logo 应用领域
东芝 - TOSHIBA 光电二极管
页数 文件大小 规格书
3页 218K
描述
DIODE UHF BAND, 8.31 pF, SILICON, VARIABLE CAPACITANCE DIODE, LEAD FREE, FSC, 1-1L1A, 2 PIN, Variable Capacitance Diode

JDV2S27FS 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-F2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.18配置:SINGLE
二极管电容容差:3.01%最小二极管电容比:2.79
标称二极管电容:8.31 pF二极管元件材料:SILICON
二极管类型:VARIABLE CAPACITANCE DIODE频带:ULTRA HIGH FREQUENCY
JESD-30 代码:R-PDSO-F2元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:10 V
子类别:Varactors表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

JDV2S27FS 数据手册

 浏览型号JDV2S27FS的Datasheet PDF文件第2页浏览型号JDV2S27FS的Datasheet PDF文件第3页 
JDV2S27FS  
TOSHIBA Diode Silicon Epitaxial Planar Type  
JDV2S27FS  
VCO for UHF Band Radio  
Unit: mm  
High capacitance ratio: C /C =2.9 (typ.)  
1V 4V  
0.6±0.05  
Low series resistance: r = 0.49 (typ.)  
s
A
This device is suitable for use in small tuners.  
Lead (Pb)-free.  
Maximum Ratings  
=
(Ta 25°C)  
0.2  
±0.05  
0.1±0.05  
M
0.07  
A
Characteristic  
Symbol  
Rating  
Unit  
Reverse voltage  
V
10  
150  
V
R
+0.02  
-0.03  
0.48  
Junction temperature  
T
°C  
°C  
j
Storage temperature range  
T
stg  
55~150  
fSC  
JEDEC  
JEITA  
TOSHIBA  
1-1L1A  
Weight: 0.0006 g (typ.)  
Electrical Characteristics  
=
(Ta 25°C)  
Characteristic  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Reverse voltage  
Reverse current  
V
I
= 1 µA  
R
10  
V
R
I
C
C
V
V
V
= 5 V  
1
nA  
R
R
R
R
8.06  
2.79  
2.79  
8.56  
2.98  
2.98  
0.64  
= 1 V, f = 1 MHz  
= 4 V, f = 1 MHz  
1V  
4V  
Capacitance  
pF  
Capacitance ratio  
Series resistance  
C
/C  
1V 4V  
r
s
V
= 1 V, f = 470 MHz  
0.49  
R
Note: Signal level when capacitance is measured. V = 100mVrms  
sig  
Marking  
1
2005-11-07  

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