Datasheet > JDV2S36E(TPH3)

JDV2S36E(TPH3)

更新时间： 2024-10-30 14:42:59

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
3页	136K
描述
JDV2S36E(TPH3)

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中文翻译

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技术参数
数据手册

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JDV2S36E(TPH3) 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.84
Is Samacsys：	N	Base Number Matches：	1

JDV2S36E(TPH3) 数据手册

JDV2S36E

TOSHIBA Diode Silicon Epitaxial Planar Type

JDV2S36E

TCXO/VCO

Unit: mm

•

High capacitance ratio: C / C = 7.5 (typ.)

1V 6V

Low series resistance: r = 0.4 Ω (typ.)

Useful for small size tuner.

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Rating

Unit

125

Junction temperature

°C

Storage temperature range

stg

−55 to 125

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

TOSHIBA

1-1G1A

Weight: 1.4 mg (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Test Condition

Min

Typ.

Max

Unit

= 1 μA

⎯

Reverse current

Capacitance

= 10 V

⎯

= 1 V, f = 1 MHz

= 6 V, f = 1 MHz

5.4

6.3

⎯

49.5

7.3

⎯

Capacitance

⎯

Capacitance ratio

Series resistance

/ C

⎯

7.5

0.4

= 4 V, f = 100 MHz

0.8

Note: Signal level when capacitance is measured: Vsig = 500 mVfms

Marking

2009-07-17

12 3

中文翻译

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