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JDV4P08U PDF预览

JDV4P08U

更新时间: 2024-01-11 01:58:29
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
4页 136K
描述
VCO for UHF Band Radio

JDV4P08U 技术参数

生命周期:Lifetime Buy包装说明:R-PDSO-G4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.17配置:SEPARATE, 2 ELEMENTS
二极管电容容差:5.46%最小二极管电容比:2.8
标称二极管电容:18.3 pF二极管元件材料:SILICON
二极管类型:VARIABLE CAPACITANCE DIODE频带:ULTRA HIGH FREQUENCY
JESD-30 代码:R-PDSO-G4JESD-609代码:e0
元件数量:2端子数量:4
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified最大重复峰值反向电压:10 V
子类别:Varactors表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:DUALBase Number Matches:1

JDV4P08U 数据手册

 浏览型号JDV4P08U的Datasheet PDF文件第2页浏览型号JDV4P08U的Datasheet PDF文件第3页浏览型号JDV4P08U的Datasheet PDF文件第4页 
JDV4P08U  
TOSHIBA DIODE Silicon Epitaxial Planar Type  
JDV4P08U  
VCO for UHF Band Radio  
Unit: mm  
High Capacitance Ratio: C /C = 3.0 (typ.)  
1V 4V  
Low Series Resistance : r = 0.35 (typ.)  
s
The device incorporates two diodes which have no common pins, and is  
suitable for high-density mounting.  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Reverse voltage  
Symbol  
Rating  
10  
Unit  
V
V
R
Junction temperature  
T
125  
°C  
°C  
j
Storage temperature range  
T
55~125  
stg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
JEDEC  
JEITA  
TOSHIBA  
1-2U1A  
Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling  
Weight: 0.006 g (typ.)  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Reverse voltage  
Symbol  
Test Condition  
Min  
10  
Typ.  
Max  
Unit  
V
V
I = 1 μA  
R
R
Reverse current  
I
C
C
V
V
V
= 10 V  
3
nA  
R
R
R
R
= 1 V, f = 1 MHz  
= 4 V, f = 1 MHz  
17.3  
5.3  
2.8  
18.3  
6.1  
3.0  
0.35  
19.3  
6.6  
1V  
4V  
Capacitance  
pF  
Capacitance ratio  
Series resistance  
C
/C  
1V 4V  
Ω
r
V
= 1 V, f = 470 MHz  
0.5  
s
R
Note: Signal level when capacitance is measured: V = 500 mVrms  
sig  
1
2007-11-01  

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