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JDV4P08U(TE85L) PDF预览

JDV4P08U(TE85L)

更新时间: 2024-02-24 00:52:52
品牌 Logo 应用领域
东芝 - TOSHIBA 二极管
页数 文件大小 规格书
4页 122K
描述
VARACTOR DIODE,SINGLE,18.3PF C(T),UMD4

JDV4P08U(TE85L) 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
标称二极管电容:18.3 pF二极管类型:VARIABLE CAPACITANCE DIODE
最大重复峰值反向电压:10 V子类别:Varactors
表面贴装:YESBase Number Matches:1

JDV4P08U(TE85L) 数据手册

 浏览型号JDV4P08U(TE85L)的Datasheet PDF文件第2页浏览型号JDV4P08U(TE85L)的Datasheet PDF文件第3页浏览型号JDV4P08U(TE85L)的Datasheet PDF文件第4页 
JDV4P08U  
TOSHIBA DIODE Silicon Epitaxial Planar Type  
JDV4P08U  
VCO for UHF Band Radio  
Unit: mm  
High Capacitance Ratio: C /C = 3.0 (typ.)  
1V 4V  
Low Series Resistance : r = 0.35 (typ.)  
s
The device incorporates two diodes which have no common pins, and is  
suitable for high-density mounting.  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Reverse voltage  
Symbol  
Rating  
10  
Unit  
V
V
R
Junction temperature  
T
125  
°C  
°C  
j
Storage temperature range  
T
55~125  
stg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
JEDEC  
JEITA  
TOSHIBA  
1-2U1A  
Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling  
Weight: 0.006 g (typ.)  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Reverse voltage  
Symbol  
Test Condition  
Min  
10  
Typ.  
Max  
Unit  
V
V
I = 1 μA  
R
R
Reverse current  
I
C
C
V
V
V
= 10 V  
3
nA  
R
R
R
R
= 1 V, f = 1 MHz  
= 4 V, f = 1 MHz  
17.3  
5.3  
2.8  
18.3  
6.1  
3.0  
0.35  
19.3  
6.6  
1V  
4V  
Capacitance  
pF  
Capacitance ratio  
Series resistance  
C
/C  
1V 4V  
Ω
r
V
= 1 V, f = 470 MHz  
0.5  
s
R
Note: Signal level when capacitance is measured: V = 500 mVrms  
sig  
1
2007-11-01  

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