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JDV2S38SC PDF预览

JDV2S38SC

更新时间: 2024-02-10 11:51:56
品牌 Logo 应用领域
东芝 - TOSHIBA 二极管
页数 文件大小 规格书
3页 108K
描述
DIODE UHF BAND, 7.37 pF, 10 V, SILICON, VARIABLE CAPACITANCE DIODE, ULTRA-SMALL, SC2, 1-1R1A, 2 PIN, Variable Capacitance Diode

JDV2S38SC 技术参数

生命周期:Obsolete包装说明:ULTRA SMALL, SC2, 1-1R1A, 2 PIN
针数:2Reach Compliance Code:unknown
风险等级:5.84最小击穿电压:10 V
配置:SINGLE二极管电容容差:5.02%
最小二极管电容比:2.38标称二极管电容:7.37 pF
二极管元件材料:SILICON二极管类型:VARIABLE CAPACITANCE DIODE
频带:ULTRA HIGH FREQUENCYJESD-30 代码:R-XBCC-N2
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
表面贴装:YES端子形式:NO LEAD
端子位置:BOTTOMBase Number Matches:1

JDV2S38SC 数据手册

 浏览型号JDV2S38SC的Datasheet PDF文件第2页浏览型号JDV2S38SC的Datasheet PDF文件第3页 
JDV2S38SC  
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type  
JDV2S38SC  
VCO for UHF Band Radio  
Unit: mm  
High Capacitance Ratio : C  
/ C  
= 2.5 (typ.)  
0.5V  
2.5V  
Low Series Resistance : r = 0.48 Ω (typ.)  
s
A two-terminal ultra-small package supports high-density mounting  
and the downsizing of end products  
Absolute Maximum Ratings (Ta = 25°C)  
0.27±0.02  
0.32±0.03  
0.025±0.015  
Characteristic  
Reverse voltage  
Symbol  
Rating  
Unit  
V
10  
150  
V
R
Junction temperature  
T
j
°C  
°C  
Storage temperature range  
T
stg  
-55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
SC2  
1.Cathode  
2.Anode  
JEDEC  
JEITA  
Please design the appropriate reliability upon reviewing the  
TOSHIBA  
1-1R1A  
Toshiba  
Semiconductor  
Reliability  
Handbook  
(“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
) Weight: 0.17 mg (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Reverse voltage  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
I
= 1 μA  
R
10  
V
R
Reverse current  
I
V
V
V
=5 V  
1
nA  
R
R
R
R
7
7.37  
2.94  
2.51  
0.48  
7.74  
3.12  
2.64  
0.63  
C
0.5V  
C
2.5V  
= 0.5 V, f = 1 MHz  
= 2.5 V, f = 1 MHz  
Capacitance  
pF  
2.76  
2.38  
Capacitance ratio  
Series resistance  
C
/ C  
2.5V  
Ω
0.5V  
r
s
V
= 1 V, f = 470 MHz  
R
Note: Signal level when capacitance is measured: V = 100 mVrms  
sig  
Marking  
2
1
1
2009-07-23  

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