Datasheet > JDV2S41AFS

JDV2S41AFS

更新时间： 2024-10-31 17:00:59

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
3页	352K
描述
5.5 pF/14 pF Variable Capacitance Diodes, SOD-923

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JDV2S41AFS 数据手册

JDV2S41AFS

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type

JDV2S41AFS

○ VCO for V/UHF Band Radio

Unit: mm

 Low series resistance: r = 0.2 Ω (typ.)

 High capacitance ratio: C / C

= 2.5 (typ.)

10V

 Useful for small size tuner.

Absolute Maximum Ratings (Ta  25°C)

Characteristics

Reverse voltage

Symbol

Rating

Unit

125

Junction temperature

°C

Storage temperature range

55 to 125

stg

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.)

are within the absolute maximum ratings.

SOD-923

―

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling Precautions”/“Derating

Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

JEDEC

JEITA

―

TOSHIBA

1-1AH1A

Weight: 0.7mg (typ.)

Electrical Characteristics (Ta  25°C)

Characteristics

Reverse voltage

Symbol

Test Condition

Min

Typ.

Max

Unit

 1 A



6.5



Reverse current

Capacitance

 15 V

 2 V, f  1 MHz

 10 V, f  1 MHz



5.5

2.0



Capacitance

10V



Capacitance ratio

Series resistance

/ C

2.5

0.2





10V

 5 V, f  470 MHz

0.4

Marking Equivalent Circuit (top view)

Start of commercial production

2022-11

2022-05-25

Toshiba Electronic Devices & Storage Corporation

12 3

中文翻译

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