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JDV2S71E PDF预览

JDV2S71E

更新时间: 2024-10-30 02:57:39
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
3页 131K
描述
UHF SHF TUNING

JDV2S71E 技术参数

生命周期:Obsolete零件包装代码:SOD
包装说明:R-PDSO-F2针数:2
Reach Compliance Code:unknown风险等级:5.81
配置:SINGLE二极管电容容差:9.09%
最小二极管电容比:10二极管元件材料:SILICON
二极管类型:VARIABLE CAPACITANCE DIODE频带:ULTRA HIGH FREQUENCY
JESD-30 代码:R-PDSO-F2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified最大重复峰值反向电压:30 V
子类别:Varactors表面贴装:YES
端子面层:TIN LEAD端子形式:FLAT
端子位置:DUALBase Number Matches:1

JDV2S71E 数据手册

 浏览型号JDV2S71E的Datasheet PDF文件第2页浏览型号JDV2S71E的Datasheet PDF文件第3页 
JDV2S71E  
TOSHIBA Diode Silicon Epitaxial Planar Type  
JDV2S71E  
UHF SHF TUNING  
Unit: mm  
High capacitance ratio: C /C  
= 11.5 (typ.)  
1 V 25V  
Low series resistance: r = 1.0 (typ.)  
s
Excellent C-V characteristics,and small tracking error.  
Useful for small size tuner.  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Reverse voltage  
Symbol  
Rating  
30  
Unit  
V
V
R
Peak reverse voltage  
Junction temperature  
Storage temperature range  
V
35(R =10 kohm)  
L
V
RM  
T
150  
°C  
°C  
j
T
55~150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
TOSHIBA  
1-1G1A  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
Weight: 0.0014 g (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Reverse voltage  
Symbol  
Test Condition  
Min  
30  
Typ.  
Max  
Unit  
V
V
I = 1 μA  
R
R
Reverse current  
Capacitance  
I
V
V
V
= 28 V  
10  
nA  
pF  
pF  
R
R
R
R
C
= 1 V, f = 1 MHz  
= 25V, f = 1 MHz  
6
7.2  
0.64  
1 V  
Capacitance  
C
0.49  
10  
25 V  
/C  
Capacitance ratio  
Series resistance  
C
11.5  
1
1 V 25 V  
r
s
V
= 5 V, f = 470 MHz  
1.5  
Ω
R
Note1: Signal level when capacitance is measured: Vsig = 500 mVrms  
Note2:Available in matched group for capacitance to 6%  
C (max) C (min)  
<
0.06  
=
C (min)  
(VR=1 ~ 25V)  
Marking  
FJ  
1
2007-11-01  

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