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JDV2S40FS PDF预览

JDV2S40FS

更新时间: 2024-10-30 19:59:47
品牌 Logo 应用领域
东芝 - TOSHIBA 光电二极管
页数 文件大小 规格书
3页 172K
描述
DIODE UHF BAND, 4.35 pF, 15 V, SILICON, VARIABLE CAPACITANCE DIODE, FSC, 1-1L1A, 2PIN, Variable Capacitance Diode

JDV2S40FS 技术参数

生命周期:Obsolete包装说明:FSC, 1-1L1A, 2 PIN
针数:2Reach Compliance Code:unknown
风险等级:5.73最小击穿电压:15 V
配置:SINGLE二极管电容容差:8.04%
最小二极管电容比:2.3标称二极管电容:4.35 pF
二极管元件材料:SILICON二极管类型:VARIABLE CAPACITANCE DIODE
频带:ULTRA HIGH FREQUENCYJESD-30 代码:R-PDSO-F2
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
Base Number Matches:1

JDV2S40FS 数据手册

 浏览型号JDV2S40FS的Datasheet PDF文件第2页浏览型号JDV2S40FS的Datasheet PDF文件第3页 
JDV2S40FS  
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type  
JDV2S40FS  
VCO for UHF Band Radio  
Unit: mm  
0.6±0.05  
High capacitance ratio: C / C  
= 2.3 (min)  
2V  
10V  
A
Low series resistance: r = 0.44 (typ.)  
s
Useful for small size tuner.  
Absolute Maximum Ratings (Ta = 25°C)  
0.2  
±0.05  
0.1±0.05  
Characteristics  
Reverse voltage  
Symbol  
Rating  
Unit  
M
0.07  
A
V
15  
150  
V
R
+0.02  
0.48  
Junction temperature  
T
j
°C  
°C  
-0.03  
Storage temperature range  
T
stg  
55 to 150  
fSC  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
TOSHIBA  
1-1L1A  
Weight: 0.6 mg (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Reverse voltage  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
I
= 1 μA  
R
15  
3
V
R
Reverse current  
Capacitance  
I
V
V
V
= 15 V  
nA  
pF  
pF  
Ω
R
R
R
R
C
= 2 V, f = 1 MHz  
= 10 V, f = 1 MHz  
4.0  
1.6  
2.3  
4.7  
2.0  
2 V  
Capacitance  
C
10 V  
/ C  
Capacitance ratio  
Series resistance  
C
2.4  
0.44  
2 V  
10 V  
r
s
V
= 1 V, f = 470 MHz  
0.6  
R
Note: Signal level when capacitance is measured: V = 500 mVrms  
sig  
Marking  
1
2009-06-22  

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