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JDV2S28SC PDF预览

JDV2S28SC

更新时间: 2024-10-30 19:53:59
品牌 Logo 应用领域
东芝 - TOSHIBA 光电二极管
页数 文件大小 规格书
3页 185K
描述
DIODE UHF BAND, 10.45 pF, 10 V, SILICON, VARIABLE CAPACITANCE DIODE, ULTRA SMALL, LEAD FREE, 1-1R1A, SC-2, 2 PIN, Variable Capacitance Diode

JDV2S28SC 技术参数

生命周期:Obsolete零件包装代码:SC-2
包装说明:R-PDSO-N2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.75
最小击穿电压:10 V配置:SINGLE
二极管电容容差:3.062%最小二极管电容比:2.1
标称二极管电容:10.45 pF二极管元件材料:SILICON
二极管类型:VARIABLE CAPACITANCE DIODE频带:ULTRA HIGH FREQUENCY
JESD-30 代码:R-PDSO-N2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified最大重复峰值反向电压:10 V
子类别:Varactors表面贴装:YES
端子面层:TIN LEAD端子形式:NO LEAD
端子位置:DUALBase Number Matches:1

JDV2S28SC 数据手册

 浏览型号JDV2S28SC的Datasheet PDF文件第2页浏览型号JDV2S28SC的Datasheet PDF文件第3页 
JDV2S28SC  
TOSHIBA Diode Silicon Epitaxial Planar Type  
JDV2S28SC  
VCO for UHF Band Radio  
Unit: mm  
High Capacitance Ratio : C /C = 3 (typ.)  
1V 4V  
Low Series Resistance : r = 0.4 ohm (typ.)  
s
A two-terminal ultra-small package supports high-density mounting  
and the downsizing of end products.  
Lead (Pb)-free.  
0.27±0.02  
0.025±0.0  
0.32±0.03  
Maximum Ratings  
(Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Reverse voltage  
V
10  
150  
V
R
Junction temperature  
T
°C  
°C  
j
Storage temperature range  
T
stg  
-55~150  
1.Anode  
2.Cathode  
SC2  
JEDEC  
JEITA  
TOSHIBA  
1-1R1A  
Weight: 0.00017 g (typ.)  
]
Electrical Characteristics  
(Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Reverse voltage  
Reverse current  
V
I
= 1 µA  
R
10  
1
V
R
I
C
C
V
V
V
= 5 V  
nA  
R
R
R
R
10.13  
3.38  
2.9  
10.77  
3.6  
= 1 V, f = 1 MHz  
= 4V, f = 1 MHz  
1V  
4V  
Capacitance  
pF  
3.08  
0.55  
Capacitance ratio  
Series resistance  
C
/C  
1V 4V  
0.4  
r
s
V
= 1 V, f = 470 MHz  
R
Note: Signal level when capacitance is measured: V = 100 mVrms  
sig  
Marking  
2
1
1
2005-11-07  

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