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JDV2S29FS PDF预览

JDV2S29FS

更新时间: 2024-10-30 03:45:43
品牌 Logo 应用领域
东芝 - TOSHIBA 二极管变容二极管光电二极管
页数 文件大小 规格书
3页 113K
描述
VCO for UHF Band Radio

JDV2S29FS 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOD包装说明:R-PDSO-F2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.83Is Samacsys:N
配置:SINGLE二极管电容容差:3.75%
最小二极管电容比:2.73二极管元件材料:SILICON
二极管类型:VARIABLE CAPACITANCE DIODE频带:ULTRA HIGH FREQUENCY
JESD-30 代码:R-PDSO-F2元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:10 V
子类别:Varactors表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

JDV2S29FS 数据手册

 浏览型号JDV2S29FS的Datasheet PDF文件第2页浏览型号JDV2S29FS的Datasheet PDF文件第3页 
JDV2S29FS  
TOSHIBA Diode Silicon Epitaxial Planar Type  
JDV2S29FS  
VCO for UHF Band Radio  
Unit: mm  
High capacitance ratio : C /C =2.8 (typ.)  
1V 4V  
0.6±0.05  
A
Low series resistance : r = 0.66 (typ.)  
s
This device is suitable for use in small tuners.  
Absolute Maximum Ratings (Ta = 25°C)  
0.2  
±0.05  
0.1±0.05  
Characteristic  
Reverse voltage  
Symbol  
Rating  
Unit  
M
0.07  
A
V
10  
150  
V
R
Junction temperature  
T
j
°C  
°C  
+0.02  
0.48  
-0.03  
Storage temperature range  
T
stg  
55~150  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
TOSHIBA  
1-1L1A  
Weight: 0.0006 g (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Reverse voltage  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
I
= 1 μA  
R
10  
1
V
R
Reverse current  
I
C
C
V
V
V
= 6 V  
nA  
R
R
R
R
= 1 V, f = 1 MHz  
= 4 V, f = 1 MHz  
3.59  
1.26  
2.73  
3.87  
1.4  
1V  
4V  
Capacitance  
pF  
Capacitance ratio  
Series resistance  
C
/C  
1V 4V  
2.91  
0.77  
Ω
r
s
V
= 1 V, f = 470 MHz  
0.66  
R
Note: Signal level when capacitance is measured. V = 100mVrms  
sig  
Marking  
1
2007-11-01  

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