JDV2S10S

更新时间： 2024-10-29 21:55:39

品牌	Logo	应用领域
东芝 - TOSHIBA		二极管
页数	文件大小	规格书
2页	70K
描述
TOSHIBA DIODE Silicon Epitaxial Planar Type

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JDV2S10S 数据手册

JDV2S10S

TOSHIBA DIODE Silicon Epitaxial Planar Type

J D V 2 S 1 0 S

VCO for UHF Band Radio

•

High Capacitance Ratio: C

/C = 2.5 (typ.)

0.5V 2.5V

Low Series Resistance : r = 0.35 Ω (typ.)

This device is suitable for use in a small-size tuner.

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Reverse voltage

150

Junction temperature

Storage temperature range

°C

−55~150

stg

Weight: 0.0011 g

Min

Electrical Characteristics (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Test Condition

Typ.

Max

Unit

= 1 µA



Reverse current

= 10 V

0.5V

2.5V

= 0.5 V, f = 1 MHz

= 2.5 V, f = 1 MHz



7.3

2.75

2.4



8.4

3.4



Capacitance



Capacitance ratio

Series resistance

2.5

0.35



Ω

0.5V 2.5V

= 1 V, f = 470 MHz

0.5

Note: Signal level when capacitance is measured: V = 500 mVrms

sig

Marking

000707EAA2

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general

can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the

buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and

to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or

damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the

most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling

Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal

equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are

neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or

failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy

control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control

instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document

shall be made at the customer’s own risk.

2001-01-09 1/2

中文翻译

下载PDF

与JDV2S10S相关器件

型号	品牌	获取价格	描述	数据表
JDV2S10T	TOSHIBA	获取价格	VCO for UHF Band Radio
JDV2S13FS	TOSHIBA	获取价格	Silicon Epitaxial Planar Type
JDV2S13S	TOSHIBA	获取价格	TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S14E	TOSHIBA	获取价格	TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S16FS	TOSHIBA	获取价格	VCO for the UHF band
JDV2S16S	TOSHIBA	获取价格	DIODE UHF BAND, 3.59 pF, SILICON, VARIABLE CAPACITANCE DIODE, 1-1K1A, SESC, 2 PIN, Variabl
JDV2S17S	TOSHIBA	获取价格	VCO for UHF Band Radio
JDV2S19FS	TOSHIBA	获取价格	DIODE UHF BAND, 3.665 pF, SILICON, VARIABLE CAPACITANCE DIODE, 1-1L1A, FSC, 2 PIN, Variabl
JDV2S19S	TOSHIBA	获取价格	TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S22FS	TOSHIBA	获取价格	Silicon Epitaxial Planar Type

与JDV2S10S相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

16
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

19
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

43
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

50

产品中心

服务支持

精选活动

关于我们

帮助中心

JDV2S10S

JDV2S10S 数据手册

与JDV2S10S相关器件

与JDV2S10S相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JDV2S10S

JDV2S10S 数据手册

与JDV2S10S相关器件

与JDV2S10S相关文章

您还可以找

您在本页遇到什么问题？