JDV2S10S

更新时间： 2024-02-16 10:24:21

品牌	Logo	应用领域
东芝 - TOSHIBA		二极管
页数	文件大小	规格书
2页	70K
描述
TOSHIBA DIODE Silicon Epitaxial Planar Type

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中文翻译

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JDV2S10S 数据手册

JDV2S10S

TOSHIBA DIODE Silicon Epitaxial Planar Type

J D V 2 S 1 0 S

VCO for UHF Band Radio

•

High Capacitance Ratio: C

/C = 2.5 (typ.)

0.5V 2.5V

Low Series Resistance : r = 0.35 Ω (typ.)

This device is suitable for use in a small-size tuner.

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Reverse voltage

150

Junction temperature

Storage temperature range

°C

−55~150

stg

Weight: 0.0011 g

Min

Electrical Characteristics (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Test Condition

Typ.

Max

Unit

= 1 µA



Reverse current

= 10 V

0.5V

2.5V

= 0.5 V, f = 1 MHz

= 2.5 V, f = 1 MHz



7.3

2.75

2.4



8.4

3.4



Capacitance



Capacitance ratio

Series resistance

2.5

0.35



Ω

0.5V 2.5V

= 1 V, f = 470 MHz

0.5

Note: Signal level when capacitance is measured: V = 500 mVrms

sig

Marking

000707EAA2

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general

can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the

buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and

to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or

damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the

most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling

Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal

equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are

neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or

failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy

control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control

instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document

shall be made at the customer’s own risk.

2001-01-09 1/2

中文翻译

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与JDV2S10S相关器件

型号	品牌	获取价格	描述	数据表
JDV2S10T	TOSHIBA	获取价格	VCO for UHF Band Radio
JDV2S13FS	TOSHIBA	获取价格	Silicon Epitaxial Planar Type
JDV2S13S	TOSHIBA	获取价格	TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S14E	TOSHIBA	获取价格	TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S16FS	TOSHIBA	获取价格	VCO for the UHF band
JDV2S16S	TOSHIBA	获取价格	DIODE UHF BAND, 3.59 pF, SILICON, VARIABLE CAPACITANCE DIODE, 1-1K1A, SESC, 2 PIN, Variabl
JDV2S17S	TOSHIBA	获取价格	VCO for UHF Band Radio
JDV2S19FS	TOSHIBA	获取价格	DIODE UHF BAND, 3.665 pF, SILICON, VARIABLE CAPACITANCE DIODE, 1-1L1A, FSC, 2 PIN, Variabl
JDV2S19S	TOSHIBA	获取价格	TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S22FS	TOSHIBA	获取价格	Silicon Epitaxial Planar Type

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