Datasheet > IXTK210P10T

IXTK210P10T

更新时间： 2024-11-18 19:42:15

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网开关脉冲晶体管
页数	文件大小	规格书
7页	180K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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IXTK210P10T 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.71
Base Number Matches：	1

IXTK210P10T 数据手册

Preliminary Technical Information

TrenchP^TM

Power MOSFETs

V_DSS= - 100V

I_D25= - 210A

IXTK210P10T

IXTX210P10T

R_DS(on)

≤

7.5mΩ

t_rr

≤

200ns

P-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

TO-264 (IXTK)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

-100

V_DGR

Tab

V_GSS

V_GSM

Continuous

Transient

±15

±25

PLUS247 (IXTX)

I_D25

T_C= 25°C (Chip Capability)

- 210

I_LRMS

I_DM

Lead Current Limit, RMS

T_C= 25°C, Pulse Width Limited by T_JM

-160

- 800

I_A

E_AS

T_C= 25°C

-100

Tab

dv/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

G = Gate

S = Source

= Drain

1040

Tab = Drain

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

Features

International Standard Packages

High Current Handling Capability

Avalanche Rated

Extended FBSOA

Fast Intrinsic Recitifier

Low R_DS(ON)and Q_G

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

M_d

F_C

Mounting Torque (TO-264)

Mounting Force (PLUS247)

1.13/10

Nm/lb.in.

N/lb.

20..120 /4.5..27

Weight

TO-264

PLUS247

Advantages

Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C Unless Otherwise Specified)

Min.

-100

- 2.5

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= - 250μA

V_DS= V_GS, I_D= - 250μA

V_GS= ±15V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

Applications

- 4.5

High-Side Switching

Push Pull Amplifiers

DC Choppers

Automatic Test Equipment

Current Regulators

Battery Charger Applications

±200 nA

I_DSS

- 25 μA

T_J= 125°C

- 300 μA

R_DS(on)

V_GS= -10V, I_D= 0.5 • I_D25, Note 1

7.5 mΩ

DS100397A(01/13)

12 3 4 5 6 7

中文翻译

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