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IXTK210P10T PDF预览

IXTK210P10T

更新时间: 2024-02-20 17:54:46
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网开关脉冲晶体管
页数 文件大小 规格书
7页 180K
描述
Power Field-Effect Transistor,

IXTK210P10T 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.71
Base Number Matches:1

IXTK210P10T 数据手册

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IXTK210P10T  
IXTX210P10T  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
-220  
-200  
-180  
-160  
-140  
-120  
-100  
-80  
-400  
-350  
-300  
-250  
-200  
-150  
-100  
-50  
VGS = -10V  
VGS = -10V  
- 7V  
- 8V  
- 7V  
- 6V  
- 6V  
- 5V  
- 4V  
-60  
- 5V  
- 4V  
-40  
-20  
0
0
0
0
0
-0.2  
-0.4  
-0.6  
-0.8  
-1  
-1.2  
-1.4  
-2.4  
-350  
0
-1  
-2  
-3  
-4  
-5  
-6  
-7  
-8  
-9  
-10  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = -105A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
-220  
-200  
-180  
-160  
-140  
-120  
-100  
-80  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = -10V  
VGS = -10V  
- 8V  
- 7V  
I D = - 210A  
- 6V  
- 5V  
I D = -105A  
-60  
-40  
- 4V  
-20  
0
-0.4  
-0.8  
-1.2  
-1.6  
-2  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = -105A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
-180  
-160  
-140  
-120  
-100  
-80  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = -10V  
External Lead Current Limit  
TJ = 125ºC  
-60  
TJ = 25ºC  
-40  
-20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
-50  
-100  
-150  
-200  
-250  
-300  
TC - Degrees Centigrade  
ID - Amperes  
© 2013 IXYS CORPORATION, All Rights Reserved  

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