IXTK21N100

更新时间： 2024-02-22 16:14:19

品牌	Logo	应用领域
IXYS		高压
页数	文件大小	规格书
4页	140K
描述
High Voltage MegaMOSTMFETs

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数据手册

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IXTK21N100 数据手册

IXTK 21N100 V_DSS= 1000 V

IXTN 21N100 I_D25= 21 A

High Voltage

MegaMOS^TMFETs

R_DS(on)= 0.55 Ω

N-Channel,EnhancementMode

TO-264 AA (IXTK)

Symbol

Test Conditions

MaximumRatings

IXTK

IXTN

V_DSS

V_DGR

T_J= 25°C to 150°C

1000

D(TAB)

T_J= 25°C to 150°C; R_GS= 1 MΩ

V_GS

Continuous

Transient

±20

±30

±20

±30

miniBLOC, SOT-227 B

E153432

V_GSM

I_D25

I_DM

T_C= 25°C, Chip capability

T_C= 25°C, pulse width limited by T_JM

P_D

T_C= 25°C

500

520

T_J

-55 ... +150

150

-55 ... +150

300

°C

T_JM

T_stg

G = Gate

S = Source

D = Drain

TAB = Drain

T_L

1.6 mm (0.063 in) from case for 10 s

°C

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

V_ISOL

50/60Hz, RMS

_ISOL≤ 1 mA

t = 1 min

t = 1 s

2500

3000

M_d

Mountingtorque

Terminalconnectiontorque

0.9/6

1.5/13 Nm/lb.in.

Features

Internationalstandardpackages

JEDECTO-264,epoxymeetUL94V-0

flammabilityclassification

Weight

miniBLOC,(ISOTOP-compatible)with

Aluminiumnitrideisolation

Low R_{DS (on)}HDMOS^TMprocess

Rugged polysilicon gate cell structure

Lowpackageinductance

Applications

Symbol

Test Conditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ. max.

DC-DC converters

Synchronousrectification

Batterychargers

Switched-modeandresonant-mode

powersupplies

DC choppers

V_DSS

V_GS= 0 V, I_D= 6 mA

1000

V_GH(th)

V_DS= V_GS, I_D= 500 µA

4.5

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±200 nA

500 µA

Temperatureandlightingcontrols

V_DS= 0.8 • V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

Advantages

Easy to mount

Space savings

Highpowerdensity

R_DS(on)

V_GS= 10 V, I_D= 0.5 • I_D25

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

0.55

Ω

IXYS reserves the right to change limits, test conditions, and dimensions.

92808I(5/97)

1 - 4

12 3 4

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