Datasheet > IXTK200N10P

IXTK200N10P

更新时间： 2024-01-05 17:01:24

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	565K
描述
PolarHTTM Power MOSFET

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数据手册

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IXTK200N10P 数据手册

Advanced Technical Information

PolarHT^TM

Power MOSFET

V_DSS= 100 V

I_D25= 200 A

R_DS(on)= 7.5mΩ

IXTK 200N10P

N-Channel Enhancement Mode

TO-264(SP) (IXTK)

Symbol

TestConditions

Maximum Ratings

V_DSS

V_DGR

= 25°C to 175°C

100

T^J_J= 25°C to 175°C; R_GS= 1 MΩ

V_GSM

I_D25

T_C= 25°C

200

(TAB)

I_D(RMS)

I_DM

External lead current limit

T_C= 25°C, pulse width limited by T_JM

400

I_AR

T_C= 25°C

G = Gate

S = Source

D = Drain

TAB = Drain

E_AR

E_AS

T_C= 25°C

100

Features

dv/dt

P_D

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 4 Ω

V/ns

International standard packages

Unclamped Inductive Switching (UIS)

rated

T_C= 25°C

800

T_J

T_JM

T_stg

-55 ... +175

175

-55 ... +150

°C

Low package inductance

- easy to drive and to protect

T_L

1.6 mm (0.062 in.) from case for 10 s

Mounting torque

300

°C

Advantages

M_d

1.13/10 Nm/lb.in.

Easy to mount

Space savings

Weight

High power density

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min. Typ.

Max.

V_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 500µA

V_GS= 20 V_DC, V_DS= 0

100

2.5

5.0

200 nA

I_DSS

V_DS= V_DSS

V_GS= 0 V

25 µA

250 µA

T_J= 150°C

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

V_GS= 15 V, I_D= 400A

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

7.5 mΩ

mΩ

PolarHT^TMDMOStransistors

utilize proprietary designs and

process. US patent is pending.

5.5

DS99186(05/04)

12 3 4 5

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