Datasheet > IXTK200N10P

IXTK200N10P

更新时间： 2024-02-12 23:32:36

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	565K
描述
PolarHTTM Power MOSFET

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXTK200N10P 数据手册

IXTK 200N10P

Symbol

g_fs

TestConditions

Characteristic Values

TO-264(SP) Outline (IXTK)

(T_J= 25°C, unless otherwise specified)

Min.

Typ.

Max.

V_DS= 10 V; I_D= 0.5 I_D25, pulse test

V_GS= 0 V, V_DS= 25 V, f = 1 MHz

C_iss

C_oss

C_rss

7600

2900

860

t_d(on)

t_r

t_d(off)

t_f

V_GS= 10 V, V_DS= 0.5 V_DSS, I_D= 60 A

R_G= 3.3 Ω (External)

150

Q_g(on)

Q_gs

240

V_GS= 10 V, V_DS= 0.5 V_DSS, I_D= 0.5 I_D25

Q_gd

135

R_thJC

R_thCK

0.18 K/W

K/W

0.15

Source-Drain Diode

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Symbol

I_S

TestConditions

Min.

typ.

Max.

V_GS= 0 V

200

I_SM

Repetitive

400

1.5

V_SD

I_F= I_S, V_GS= 0 V,

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t_rr

I_F= 25 A

-di/dt = 100 A/µs

V_R= 100 V

120

3.3

Q_RM

µC

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYSMOSFETs andIGBTsarecovered by

oneormoreofthefollowingU.S.patents:

4,835,592

4,850,072

4,881,106

4,931,844

5,017,508

5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,404,065B1

6,534,343

6,583,505

6,683,344

6,710,405B2

6,710,463

6,727,585

6,259,123B1

6,306,728 B1

123 4 5

下载PDF

与IXTK200N10P相关器件

型号	品牌	描述	获取价格	数据表
IXTK20N140	IXYS	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	获取价格
IXTK20N150	IXYS	Power Field-Effect Transistor, 20A I(D), 1500V, 1ohm, 1-Element, N-Channel, Silicon, Metal	获取价格
IXTK20N150	LITTELFUSE	高压系列N通道标准MOSFET适用于多种多样的电源开关系统，包括高压电源、电容放电电路、脉	获取价格
IXTK210P10T	IXYS	Power Field-Effect Transistor, 210A I(D), 100V, 0.0075ohm, 1-Element, P-Channel, Silicon,	获取价格
IXTK210P10T	LITTELFUSE	Power Field-Effect Transistor,	获取价格
IXTK21N100	IXYS	High Voltage MegaMOSTMFETs	获取价格