High Voltage Power
MOSFETs w/ Extended
FBSOA
VDSS
ID25
RDS(on) < 1Ω
= 1500V
= 20A
IXTK20N150
IXTX20N150
N-Channel Enhancement Mode
Avalanche Rated
Guaranteed FBSOA
TO-264 (IXTK)
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
1500
1500
V
V
G
D
S
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
VGSS
VGSM
Continuous
Transient
±30
±40
V
V
Tab
ID25
IDM
TC = 25°C
20
50
A
A
PLUS247 (IXTX)
TC = 25°C, Pulse Width Limited by TJM
IA
TC = 25°C
TC = 25°C
10
2.5
5
A
J
EAS
dv/dt
G
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
V/ns
D
S
Tab
PD
TC = 25°C
1250
W
TJ
-55 to +150
150
°C
°C
°C
G = Gate
S = Source
D
= Drain
Tab = Drain
TJM
Tstg
-55 to +150
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
Features
Md
FC
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
Nm/lb.in.
N/lb.
20..120 /4.5..27
z
Avalanche Rated
Weight
TO-264
PLUS247
10
6
g
g
z
z
z
Fast Intrinsic Diode
Guaranteed FBSOA at 75°C
Low Package Inductance
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
(TJ = 25°C, Unless Otherwise Specified)
Advantages
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 1mA
VDS = VGS, ID = 1mA
VGS = ±30V, VDS = 0V
VDS = VDSS, VGS = 0V
1500
2.5
V
V
z
Easy to Mount
Space Savings
z
4.5
±200 nA
IDSS
50 µA
Applications
TJ = 125°C
750 µA
z
High Voltage Power Supplies
Capacitor Discharge
Pulse Circuits
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
1
Ω
z
z
DS100424B(11/12)
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